APT10SCD120K 1200V 10A Zero Recovery Silicon Carbide Schottky Diode (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Zero Recovery Time (t ) Higher Reliability Systems Anti-Parallel Diode rr -Switchmode Power Supply -Inverters Popular TO-220 Package Minimizes or eliminates snubber 1 Applicatons Low Forward Voltage 2 -Power Factor Correction (PFC) Low Leakage Current -Hardswitching 1 2 1 - Cathode 2 - Anode Back of Case -Cathode MAXIMUM RATINGS T = 25C unless otherwise specified. C Symbol Characteristic / Test Conditions Ratings Unit V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 1200 Volts RRM V Maximum Working Peak Reverse Voltage RWM T = 25C 37 C I Maximum D.C. Forward Current F T = 135C 10 C Amps I 50 Repetitive Peak Forward Surge Current (T = 45C, t = 10ms, Half Sine Wave) FRM J p I 110 Non-Repetitive Forward Surge Current (T = 25C, t = 10ms, Half Sine) FSM J p T = 25C 125 C P Power Dissipation W TOT T = 110C 45 C T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for 10 Seconds 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 10A T = 25C 1.5 1.8 F J V Forward Voltage Volts F I = 10A, T = 150C 2.1 F J V = 1200V T = 25C 200 R J I Maximum Reverse Leakage Current A RM V = 1200V, T = 150C 1000 R J Q Total Capactive Charge V = 600V, I = 10A, di/dt = -500A/s, T = 25C 22 nC c R F J Junction Capacitance V = 1V, T = 25C, f = 1MHz 600 R J C Junction Capacitance V = 200V, T = 25C, f = 1MHz 71 pF T R J Junction Capacitance V = 400V, T = 25C, f = 1MHz 52 R J APT10SCD120K THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit Junction-to-Case Thermal Resistance 1.0 C/W R JC 0.07 oz W Package Weight T 1.9 g 6.4 lbin Torque Maximum Mounting Torque 0.7 Nm Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 1. 2 1 D = 0.9 0. 8 0.7 0. 6 0.5 Note: t 1 0. 4 0.3 t 2 t 0. 2 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 20 40 T = -55C J 35 T = 25C 16 J 30 T = 125C J 25 12 20 T = 150C J 8 15 10 4 5 0 0 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 Case Temperature (C) V , ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 3, Maximum Forward Current vs. Case Temperature FIGURE 2, Forward Current vs. Forward Voltage 140 600 150C 120 500 100 400 80 300 60 125C 200 40 100 20 75C 25C 0 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1400 CASE TEMPERATURE (C) V , REVERSE VOLTAGE (V) R Figure 4. Maximum Power Dissipation vs. Case Temperature Figure 5. Reverse Leakage Currents vs. Reverse Voltage 050-7706 Rev B 9-2015 I , FORWARD CURRENT (A) F P (W) TOTAL Z , THERMAL IMPEDANCE (C/W) JC I , REVERSE LEAKAGE CURRENT (A) I (peak) (A) R F P DM