APT20SCD65K 650V 20A Zero Recovery Silicon Carbide Schottky Diode (K) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS Higher Reliability Systems Anti-Parallel Diode Zero Recovery Time (t ) rr -Switchmode Power Supply -Inverters Popular TO-220 Package Minimizes or eliminates snubber 1 Power Factor Correction (PFC) Low Forward Voltage 2 Low Leakage Current 1 2 1 - Cathode 2 - Anode Back of Case -Cathode MAXIMUM RATINGS T = 25C unless otherwise specified. C Symbol Characteristic / Test Conditions Ratings Unit V Maximum D.C. Reverse Voltage R V Maximum Peak Repetitive Reverse Voltage 650 Volts RRM V Maximum Working Peak Reverse Voltage RWM T = 25C 32 C I Maximum D.C. Forward Current F T = 90C 20 C Amps I 75 Repetitive Peak Forward Surge Current (T = 25C, t = 10ms, Half Sine Wave) FRM C p I 165 Non-Repetitive Forward Surge Current (T = 25C, t = 10ms, Half Sine) FSM C p T = 25C 114 C P Power Dissipation W TOT T = 110C 36 C T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for 10 Seconds 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit I = 20A T = 25C 1.5 1.8 F J V Forward Voltage Volts F I = 20A, T = 150C 1.9 F J V = 650V T = 25C 20 400 R J I Maximum Reverse Leakage Current A RM V = 650V, T = 150C 250 R J Q Total Capactive Charge V = 325V, I = 20A, di/dt = -500A/s, T = 25C 100 nC c R F J Junction Capacitance V = 0.1V, T = 25C, f = 1MHz 680 R J C Junction Capacitance V = 200V, T = 25C, f = 1MHz 89 pF T R J Junction Capacitance V = 400V, T = 25C, f = 1MHz 73 R J APT20SCD65K THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions Min Typ Max Unit Junction-to-Case Thermal Resistance 1.1 C/W R JC 0.07 oz W Package Weight T 1.9 g 6.4 lbin Torque Maximum Mounting Torque 0.7 Nm Microsemi reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES 1.2 D = 0.9 1.0 0.7 0.8 0.6 0.5 Note: t 0.4 1 0.3 t 2 0.2 t 1 t Duty Factor D = / 0.1 2 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 35 40 30 30 25 20 T = 125C T = -55C J J 20 T = 25C 15 T = 150C J J 10 10 5 0 0 25 50 75 100 125 150 0 1 2 3 4 Case Temperature (C) V , ANODE-TO-CATHODE VOLTAGE (V) F FIGURE 3, Maximum Forward Current vs. Case Temperature FIGURE 2, Forward Current vs. Forward Voltage 050-7708 Rev A 9-2013 I , FORWARD CURRENT (A) F Z , THERMAL IMPEDANCE (C/W) JC I (peak) (A) F P DM