Preliminary Datasheet R07DS0434EJ0300 2SK975 (Previous: REJ03G0905-0200) Rev.3.00 Silicon N Channel MOS FET Jun 07, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 3 2 1 S Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 1.5 A D *1 Drain peak current I 4.5 A D(pulse) Body to drain diode reverse drain current I 1.5 A DR Channel dissipation Pch 900 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. PW 10 s, duty cycle 1% R07DS0434EJ0300 Rev.3.00 Page 1 of 6 Jun 07, 2011 2SK975 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Zero gate voltage drain current I 100 A V = 50 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.0 2.0 V I = 1 mA, V = 10 V GS(off) D DS 2 Static drain to source on state R 0.3 0.4 I = 1 A, V = 10 V * DS(off) D GS 2 resistance 0.4 0.55 I = 1 A, V = 4 V * D GS 2 Forward transfer admittance y 0.9 1.5 S I = 1 A, V = 10 V * fs D DS Input capacitance Ciss 140 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 70 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time t 3 ns I = 1 A, V = 10 V, d(on) D GS R = 30 L Rise time t 12 ns r Turn-off delay time t 50 ns d(off) Fall time t 30 ns f Body to drain diode forward voltage V 0.9 V I = 1.5 A, V = 0 DF F GS Body to drain diode reverse recovery t 45 ns I = 1.5 A, V = 0, rr F GS time di /dt = 50 A/s F Note: 2. Pulse test R07DS0434EJ0300 Rev.3.00 Page 2 of 6 Jun 07, 2011