X-On Electronics has gained recognition as a prominent supplier of 2SK975TZ-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2SK975TZ-E MOSFETs are a product manufactured by Renesas. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2SK975TZ-E Renesas

2SK975TZ-E electronic component of Renesas
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See Product Specifications
Part No. 2SK975TZ-E
Manufacturer: Renesas
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 1.5A 3-Pin TO-92 Mod T/R
Datasheet: 2SK975TZ-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
60: USD 0.3427 ea
Line Total: USD 20.56 
Availability - 0
MOQ: 60  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 60
Multiples : 1
60 : USD 0.3427

   
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the 2SK975TZ-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2SK975TZ-E and other electronic components in the MOSFETs category and beyond.

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Preliminary Datasheet R07DS0434EJ0300 2SK975 (Previous: REJ03G0905-0200) Rev.3.00 Silicon N Channel MOS FET Jun 07, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D G 1. Source 2. Drain 3. Gate 3 2 1 S Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 1.5 A D *1 Drain peak current I 4.5 A D(pulse) Body to drain diode reverse drain current I 1.5 A DR Channel dissipation Pch 900 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note: 1. PW 10 s, duty cycle 1% R07DS0434EJ0300 Rev.3.00 Page 1 of 6 Jun 07, 2011 2SK975 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test conditions Drain to source breakdown voltage V 60 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source breakdown voltage V 20 V I = 100 A, V = 0 (BR)GSS G DS Gate to source leak current I 10 A V = 16 V, V = 0 GSS GS DS Zero gate voltage drain current I 100 A V = 50 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.0 2.0 V I = 1 mA, V = 10 V GS(off) D DS 2 Static drain to source on state R 0.3 0.4 I = 1 A, V = 10 V * DS(off) D GS 2 resistance 0.4 0.55 I = 1 A, V = 4 V * D GS 2 Forward transfer admittance y 0.9 1.5 S I = 1 A, V = 10 V * fs D DS Input capacitance Ciss 140 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 70 pF Reverse transfer capacitance Crss 20 pF Turn-on delay time t 3 ns I = 1 A, V = 10 V, d(on) D GS R = 30 L Rise time t 12 ns r Turn-off delay time t 50 ns d(off) Fall time t 30 ns f Body to drain diode forward voltage V 0.9 V I = 1.5 A, V = 0 DF F GS Body to drain diode reverse recovery t 45 ns I = 1.5 A, V = 0, rr F GS time di /dt = 50 A/s F Note: 2. Pulse test R07DS0434EJ0300 Rev.3.00 Page 2 of 6 Jun 07, 2011

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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