Green DMTH4005SK3 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R max DSS DS(ON) T = +25C C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m VGS = 10V and robust end application Low R minimizes power losses DS(ON) Low Q minimizes switching losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate This MOSFET has been designed to minimize the on-state resistance Datasheet (DMTH4005SK3Q) (R ) and yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Engine Management Systems Case: TO252 (DPAK) Body Control Electronics Case Material: Molded Plastic, Green Molding Compound. UL DCDC Converters Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D D TO252 (DPAK) G D G S S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMTH4005SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH4005SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 95 Continuous Drain Current (Note 6) (Note 9) A I D T = +100C 73 C Maximum Body Diode Forward Current (Note 6) 85 A T = +25C I C S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 150 A DM 32.5 Avalanche Current, L=0.1mH I A AS Avalanche Energy, L=0.1mH E 52.8 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.1 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 38 C/W JA Total Power Dissipation (Note 6) 100 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 1.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3.6 4.5 m V = 10V, I = 50A DS(ON) GS D Diode Forward Voltage 0.9 V VSD VGS = 0V, IS = 50A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 3062 C iss V = 20V, V = 0V, DS GS Output Capacitance 902 pF C oss f = 1MHz Reverse Transfer Capacitance C 179 rss 0.67 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge Q 49.1 g V = 20V, I = 50A, DD D 10.3 Gate-Source Charge Q nC gs Gate-Drain Charge 13 Qgd 8.7 Turn-On Delay Time t D(ON) Turn-On Rise Time 6.8 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 18.6 I = 50A, R = 3 t D G D(OFF) Turn-Off Fall Time 7.3 t F Body Diode Reverse Recovery Time 31.8 ns t RR I = 50A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 26.5 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. 2 of 7 DMTH4005SK3 August 2016 Diodes Incorporated www.diodes.com Document number: DS38212 Rev. 3 - 2