X-On Electronics has gained recognition as a prominent supplier of IPB065N10N3 G MOSFETs across the USA, India, Europe, Australia, and various other global locations. IPB065N10N3 G MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IPB065N10N3 G Infineon

Name: IPB065N10N3 G
Brand: Infineon
SKU: IPB065N10N3G_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IPB065N10N3 G electronic component of Infineon

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See Product Specifications

Part No.	IPB065N10N3 G
Manufacturer:	Infineon
Category:	MOSFETs
Description:	MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mÎ© @ 80A,10V TO-263-2 RoHS
Datasheet:	IPB065N10N3 G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 4.8221 ea
Line Total: USD 4.82

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IPB065N10N3 G More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 1 Multiples : 1	1 : USD 4.8221 10 : USD 3.179 30 : USD 2.8406 100 : USD 2.495 500 : USD 2.3387 1000 : USD 2.2699

Specifications

Manufacturer Infineon Infineon
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 263 - 2 TO - 263 - 2
Brand Category Infineon Infineon
Fet Type n trench n trench
Drain To Source Voltagevdss 100 V 100 V
Continuous Drain Current Id @ 25°C 80 A (t C) 80 A (t C)
Vgsth Max @ Id 3.5 V @ 90u A 3.5 V @ 90u A
Rds On Max @ Id Vgs 6.5 m @ 80a,10v 6.5 m @ 80a,10v
Power Dissipation Max 150 W 150 W
Drain Source Voltage Vdss 100 V 100 V
Continuous Drain Current Id 80 A 80 A
Power Dissipation Pd 150 W 150 W
Drain Source On Resistance Rdson@Vgs Id 6.5 mOhms @10V , 80A 6.5 mOhms @10V , 80A
Gate Threshold Voltage Vgsth@Id 3.5 V @90uA 3.5 V @90uA
Type N Channel N Channel

We are delighted to provide the IPB065N10N3 G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IPB065N10N3 G and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Infineon IPB065N10N3 G is a MOSFET N Trench 100V 80A (Tc) 3.5V @ 90uA 6.5 mO @ 80A,10V TO-263-2 RoHS device. It is a surface mount transistor used in switched-mode power supplies and other high-current switching applications. This MOSFET is an enhancement-mode device constructed with Trench technology from Infineon with a drain-source voltage of 100V and an on-state drain current of up to 80A. It has a low gate-source voltage of 3.5V @ 90uA and a low drain-source On-state Resistance of 6.5 mO @ 80A. The package for the IPB065N10N3 G is TO-263-2, meeting the RoHS standard.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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INF
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Infineon (IRF)
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Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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