Applications Brushed Motor drive applications HEXFET Power MOSFET BLDC Motor drive applications PWM Inverterized topologies D V 40V DSS Battery powered circuits R typ. 3.0m DS(on) Half-bridge and full-bridge topologies max. 3.9m Synchronous rectifier applications G Resonant mode power supplies I 120A D (Silicon Limited) OR-ing and redundant power switches S I 56A DC/DC and AC/DC converters D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche D-Pak SOA IRFR7446TRPbF Enhanced body diode dv/dt and dI/dt Capability Lead-Free GD S Gate Drain Source Ordering Information Orderable part number Package Type Standard Pack Complete Part Number Form Quantity IRFR7446PBF D-PAK Tube/Bulk 75 IRFR7446PBF IRFR7446TRPBF D-PAK Tape and Reel 2000 IRFR7446TRPBF 10 120 LIMITED BY PACKAGE I = 56A D 100 8 80 6 60 T = 125C J 40 4 20 T = 25C J 2 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) T , Case Temperature (C) GS C Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature R (on), Drain-to -Source On Resistance m( ) DS I , Drain Current (A ) D Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 120 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 84 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 D C GS 520 I Pulsed Drain Current DM 98 P T = 25C Maximum Power Dissipation W D C 0.66 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics 125 E Single Pulse Avalanche Energy AS (Thermally limited) mJ 251 E Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15,16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC Junction-to-Ambient (PCB Mount) C/W R 50 JA R Junction-to-Ambient 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250A V Drain-to-Source Breakdown Voltage 40 V (BR)DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 26 mV/C (BR)DSS J D V = 10V, I = 56A R Static Drain-to-Source On-Resistance 3.0 3.9 m DS(on) GS D 4.4 m V = 6.0V, I = 28A GS D V = V , I = 100A V Gate Threshold Voltage 2.2 3.0 3.9 V DS GS D GS(th) V = 40V, V = 0V I Drain-to-Source Leakage Current 1.0 A DS GS DSS V = 40V, V = 0V, T = 125C 150 DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 1.5 G Pulse width 400 s duty cycle 2%. Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Bond wire current limit is 56A. Note that current as C while V is rising from 0 to 80% V . oss DS DSS limitations arising from heating of the device leads may occur with C eff. (ER) is a fixed capacitance that gives the same energy as oss some lead mounting arrangements. (Refer to AN-1140) C while V is rising from 0 to 80% V . Repetitive rating pulse width limited by max. junction oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recom temperature. mended footprint and soldering techniques refer to application note AN-994. Limited by T , starting T = 25C, L = 0.08mH Jmax J R is measured at T approximately 90C. J R = 50, I = 56A, V =10V. GS G AS Limited by T starting T = 25C, L= 1mH, R = 50, I = 22A, V =10V. Jmax J G AS GS I 100A, di/dt 1306A/s, V V , T 175C. SD DD (BR)DSS J L and L are Internal Drain Inductance and Internal Source Inductance D S