DMN1003UCA6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features CSP with Footprint 3.54mm 1.77mm IS Max BVSSS RSS(ON) Typ Height = 0.21mm for Low Profile T = +25C A ESD Protection of Gate 12V 23.6A 2.5m VGS = 3.8V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change Description control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), This new generation MOSFET has been designed to minimize the on- please contact us or your local Diodes representative. state resistance (R ) and yet maintain superior switching SS(ON) DMN1003UCA6 Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Source-Source Voltage V 12 V SSS Gate-Source Voltage V 8 V GSS Steady TA = +25C 23.6 A Continuous Source Current (Note 5) VGS = 4.5V IS State 18.9 TA = +70C Steady TA = +25C 16.8 Continuous Source Current (Note 5) V = 2.5V I A GS S State 13.4 T = +70C A Pulsed Source Current (Note 6) I 100 A SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) 1.05 W PD 120.7 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 7) RJA Power Dissipation (Note 5) 2.67 W PD 46.8 C/W Thermal Resistance, Junction to Ambient TA = +25C (Note 5) RJA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage BV 12 V V = 0V, I = 1mA SSS GS S Zero Gate Voltage Source Current T = +25C I 1 A V = 10V, V = 0V J SSS SS GS Gate-Source Leakage I 10 A V = 8V, V =0V GSS GS SS ON CHARACTERISTICS (Note 8) V = 6V, I = 1mA Gate Threshold Voltage V 0.5 1.3 V SS S GS(TH) 1.6 2.3 3.2 VGS = 4.5V, IS = 5A 1.7 2.4 3.2 VGS = 4.0V, IS = 5A Static Source-Source On-Resistance 1.8 2.5 3.2 m RSS(ON) VGS = 3.8V, IS = 5A 1.9 2.7 4.4 V = 3.1V, I = 5A GS S 2.1 3.0 6.3 V = 2.5V, I = 5A GS S Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 3A SS GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 3315 iss VSS = 6V, VGS = 0V, Output Capacitance C 850 pF oss f = 1.0MHz Reverse Transfer Capacitance 248 Crss Total Gate Charge 56.5 Qg Gate-Source Charge 8.8 Qgs V = 6V, V = 4.5V, SS GS nC Gate-Drain Charge 13.3 I = 27A Qgd S 6.9 Gate Charge at VTH Qg(TH) Turn-On Delay Time 603 tD(ON) Turn-On Rise Time t 1694 V = 6V, V = 4.5V, R SS GS ns Turn-Off Delay Time t 4749 IS = 3A D(OFF) Turn-Off Fall Time t 6208 F 2 2 Notes: 5. Device mounted on FR-4 material with 1-inch (6.45-cm ), 2-oz. (0.071-mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN1003UCA6 December 2019 Diodes Incorporated www.diodes.com Document number: DS39389 Rev. 6 - 2