DocumentNumber:MRF6V4300N FreescaleSemiconductor Rev. 3, 4/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V4300NR1 Designed primarily for CW large--signal output and driver applications with MRF6V4300NBR1 frequenciesupto600MHz.Devicesareunmatchedandaresuitableforusein industrial, medicalandscientific applications. TypicalCW Performance: V =50Volts,I = 900mA, P = 300Watts, DD DQ out f = 450MHz 10--600MHz,300W,50V Power Gain 22dB LATERALN--CHANNEL DrainEfficiency 60% SINGLE--ENDED Capableof Handling10:1VSWR, 50Vdc, 450MHz, 300Watts CW BROADBAND Output Power RFPOWERMOSFETs Features CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters CASE1486--03,STYLE1 QualifiedUptoaMaximum of 50V Operation DD TO--270 WB--4 IntegratedESD Protection PLASTIC Greater NegativeGate--SourceVoltageRangefor ImprovedClass C MRF6V4300NR1 Operation 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. CASE1484--04,STYLE1 TO--272 WB--4 PLASTIC MRF6V4300NBR1 PARTSARESINGLE--ENDED RF /V RF /V in GS out DS RF /V RF /V in GS out DS (TopView) Note: Exposedbacksideofthepackageis thesourceterminalforthetransistor. Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableatTable2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase CaseTemperature83C,300W CW R 0.24 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =150mA,V =0Vdc) D GS ZeroGateVoltageDrainLeakageCurrent I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.65 2.4 Vdc GS(th) (V =10Vdc,I =800Adc) DS D GateQuiescentVoltage V 1.9 2.7 3.4 Vdc GS(Q) (V =50Vdc,I =900mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =2Adc) GS D DynamicCharacteristics ReverseTransferCapacitance C 2.8 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 105 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 304 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohm system)V =50Vdc,I =900mA,P =300W,f=450MHz,CW DD DQ out PowerGain G 20 22 24 dB ps DrainEfficiency 58 60 % D InputReturnLoss IRL --16 --9 dB 1. MTTFcalculatoravailableat