DocumentNumber:MRF6V10010N FreescaleSemiconductor Rev. 3, 7/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF6V10010NR4 RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for useinpulsedapplications. TypicalPulsedPerformance: V =50Volts,I =10mA,P = 10Watts DD DQ out Peak (2W Avg.), f = 1090MHz, PulseWidth= 100 sec, Duty Cycle= 20% Power Gain 25dB 1090MHz,10W,50V DrainEfficiency 69% PULSED Features LATERALN--CHANNEL CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters RFPOWERMOSFET QualifiedUptoaMaximum of 50V Operation DD IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RoHSCompliant InTapeandReel. R4Suffix = 100Units per 12mm, 7inchReel. CASE466--03,STYLE1 PLD--1.5 PLASTIC Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+100 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C OperatingJunctionTemperature T 200 C J Table2.ThermalCharacteristics (1,2) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase CaseTemperature79C,10W Pulsed,100sec PulseWidth,20%Duty Cycle Z 1.6 C/W JC 1. MTTFcalculatoravailableatTable3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1C(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 100 Vdc (BR)DSS (V =0Vdc,I =7mA) GS D ZeroGateVoltageDrainLeakageCurrent I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 1 1.7 2.5 Vdc GS(th) (V =10Vdc,I =36Adc) DS D GateQuiescentVoltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50Vdc,I =10mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.2 Vdc DS(on) (V =10Vdc,I =70mAdc) GS D DynamicCharacteristics ReverseTransferCapacitance C 0.1 pF rss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 3.38 pF oss (V =50Vdc30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 9.55 pF iss (V =50Vdc,V =0Vdc30mV(rms)ac 1MHz) DS GS FunctionalTests(InFreescaleTestFixture,50ohmsystem)V =50Vdc,I =10mA,P =10W Peak (2W Avg.),f=1090MHz, DD DQ out Pulsed,100sec PulseWidth,20%Duty Cycle PowerGain G 23 25 28 dB ps DrainEfficiency 66 69 % D InputReturnLoss IRL --12 --8 dB MRF6V10010NR4 RF DeviceData FreescaleSemiconductor 2