DocumentNumber:MRF6V12500H FreescaleSemiconductor Rev. 5, 7/2016 TechnicalData RFPowerLDMOSTransistors MRF6V12500H N--Channel Enhancement--ModeLateral MOSFETs MRF6V12500HS TheseRFpowertransistorsaredesignedforapplicationsoperatingat MRF6V12500GS frequenciesbetween960and1215MHzsuchasdistancemeasuring equipment (DME), transponders and secondary radars for air traffic control. Thesedevices aresuitable foruse inpulse applications, including ModeS ELM. 960--1215MHz,500W,50V TypicalPulsePerformance: V =50Volts,I = 200mA DD DQ PULSE (1) P Freq. G out ps D RFPOWERLDMOSTRANSISTORS Application SignalType (W) (MHz) (dB) (%) Narrowband Pulse 500Peak 1030 19.7 62.0 Short Pulse (128 sec, 10% Duty Cycle) Narrowband Pulse 500Peak 1030 19.7 62.0 ModeSELM (48 (32 sec on, 18 sec off), Period 2.4 msec, 6.4% Long--term Duty Cycle) NI--780H--2L Broadband Pulse 500Peak 960--1215 18.5 57.0 MRF6V12500H (128 sec, 10% Duty Cycle) 1. Minimum outputpowerforeachspecifiedpulsecondition. Capableof Handling10:1VSWR 50Vdc, 1030MHz, 500Watts Peak Power Features NI--780S--2L CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters MRF6V12500HS Internally Matchedfor Easeof Use QualifieduptoaMaximum of 50V Operation DD IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation NI--780GS--2L MRF6V12500GS Gate Drain 21 (TopView) Note: Thebacksideofthepackageisthe sourceterminalforthetransistor. Figure1.PinConnections FreescaleSemiconductor, Inc., 2009--2010, 2012, 2015--2016. All rights reserved. MRF6V12500HMRF6V12500HSMRF6V12500GS RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalImpedance,JunctiontoCase CaseTemperature80C,500W Peak,128 sec PulseWidth,10%Duty Cycle Z 0.044 C/W JC Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2,passes 2600V MachineModel(perEIA/JESD22--A115) B,passes 200V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (V =0Vdc,I =200mA) GS D ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 200 Adc DSS (V =90Vdc,V =0Vdc) DS GS OnCharacteristics GateThresholdVoltage V 0.9 1.7 2.4 Vdc GS(th) (V =10Vdc,I =1.32mA) DS D GateQuiescentVoltage V 1.7 2.4 3.2 Vdc GS(Q) (V =50Vdc,I =200mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =3.26Adc) GS D (4) DynamicCharacteristics ReverseTransferCapacitance C 0.2 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 697 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 1391 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat