DATA SHEET www.onsemi.com G N-Channel RF Amplifier D MMBF5484, MMBF5485, S NOTE: Source & Drain MMBF5486 are interchangeable SOT23 This device is designed primarily for electronic switching CASE 31808 applications such as low On Resistance analog switching. Sourced from Process 50. ABSOLUTE MAXIMUM RATINGS* (T = 25C unless otherwise noted) MARKING DIAGRAM A Symbol Rating Value Unit V DrainGate Voltage 25 V DG 6xM V GateSource Voltage 25 V GS 1 I Forward Gate Current 10 mA GF 6x = Device Code (x = B, M, H) T , T Operating and Storage Junction 55 to +150 C J stg M = Date Code Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION *These rating are limiting values above which the serviceability of any semiconductor device may be impaired. Device Package Shipping 1. These rating are based on a maximum junction temperature of 150C. MMBF5484 3000 Tape & 2. These are steady state limits. The factory should be consulted on applications SOT23 involving pulsed or low duty cycle operations. Reel (PbFree) MMBF5484 MMBF5484 THERMAL CHARACTERISTICS (T = 25C unless otherwise noted) A For information on tape and reel specifications, including part orientation and tape sizes, please Max refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *MMBF54845486 Symbol Characteristic Unit P Total Device Dissipation 225 mW D Derate above 25C 1.8 mW/C Thermal Resistance, Junction C/W R JC to Case R Thermal Resistance, Junction 556 C/W JA to Ambient *Device mounted on FR4 PCB 1.6 x 1.6 x 0.06. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: September, 2021 Rev. 2 MMBF5486/DMMBF5484, MMBF5485, MMBF5486 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS V GateSource Breakdown Voltage I = 1.0 A, V = 0 25 V (BR)GSS G DS I Gate Reverse Current V = 20 V, V = 0 1.0 nA GSS GS DS V = 20 V, V = 0, T = 100C 0.2 A GS DS A V GateSource Cutoff Voltage V = 15 V, I = 10 nA 5484 0.3 3.0 V GS(off) DS D 5485 0.5 4.0 V 5486 2.0 6.0 V ON CHARACTERISTICS I ZeroGate Voltage Drain Current* V = 15 V, V = 0 5484 1.0 5.0 mA DSS DS GS 5485 4.0 10 mA 5486 8.0 20 mA SMALL SIGNAL CHARACTERISTICS g Forward Transfer Conductance V = 15 V, V = 0, f = 1.0 kHz 5484 3000 6000 mhos fs DS GS 5485 3500 7000 mhos 5486 4000 8000 mhos Re y Input Conductance V = 15 V, V = 0, f = 100 MHz 5484 100 mhos ( is) DS GS V = 15 V, V = 0, f = 400 kHz 5485 / 1000 mhos DS GS 5486 g Output Conductance V = 15 V, V = 0, f = 1.0 kHz 5484 50 mhos os DS GS 5485 60 mhos 5486 75 mhos Re y Output Conductance V = 15 V, V = 0, f = 100 MHz 5484 75 mhos ( os) DS GS V = 15 V, V = 0, f = 400 MHz 5485 / 100 mhos DS GS 5486 Re y Forward Transconductance V = 15 V, V = 0, f = 100 MHz 5484 2500 mhos ( fs) DS GS V = 15 V, V = 0, f = 400 MHz 5485 3000 mhos DS GS 5486 3500 mhos C Input Capacitance V = 15 V, V = 0, f = 1.0 MHz 5.0 pF iss DS GS C Reverse Transfer Capacitance V = 15 V, V = 0, f = 1.0 MHz 1.0 pF rss DS GS C Output Capacitance V = 15 V, V = 0, f = 1.0 MHz 2.0 pF oss DS GS NF Noise Figure V = 15 V, R = 1.0 k , f = 100 MHz 5484 3.0 dB DS G V = 15 V, R = 1.0 k , f = 400 MHz 5484 4.0 dB DS G V = 15 V, R = 1.0 k , f = 100 MHz 5485 / 2.0 dB DS G 5486 V = 15 V, R = 1.0 k , f = 400 MHz 5485 / 4.0 dB DS G 5486 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2