ATF-50189 1 Enhancement Mode Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Features Avago Technologiess ATF-50189 is a high linearity, medi- High Linearity and P1dB um power, low noise E-pHEMT FET packaged in a low cost Low Noise Figure 3 surface mount SOT89 package. The combination of low Excellent uniformity in product specifications noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter application. Its SOT 89 standard package operating frequency range is from 400 MHz to 3.9 GHz. 2 Point MTTF > 300 years The ATF-50189 is ideally suited for Cellular/PCS and WCD- MSL-2 and lead-free MA wireless infrastructure, WLAN, WLL and MMDS appli- Tape-and-Reel packaging option available cation, and general purpose discrete E-pHEMT amplifiers which require high linearity and power. All devices are Specifications 100% RF and DC tested. 2 GH, 4.5V, 280 mA (Typ.) 45 dBm Output IP3 Notes: 1. Enhancement mode technology employs a single positive Vgs, 29 dBm Output Power at 1dB gain compression eliminating the need of negative gate voltage associated with conventional depletion mode devices. 1.1 dB Noise Figure 2. Refer to reliability datasheet for detailed MTTF data 15.5 dB Gain 3. Conform to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power 62% PAE at P1dB 4 LFOM 14 dB Pin Connections and Package Marking Applications Front-end LNA Q2 and Q3, Driver or Pre-driver Amplifier for Cellular/PCS and WCDMA wireless infrastructure 0GX Driver Amplifier for WLAN, WLL/RLL and MMDS applications General purpose discrete E-pHEMT for other high 1 2 3 3 2 1 linearity applications RFin GND RFout RFout GND RFin Top View Bottom View Attention: Observe precautions for Notes: handling electrostatic sensitive devices. Package marking provides orientation and identification: ESD Machine Model (Class A) 0G = Device Code ESD Human Body Model (Class 1C) x = Month code indicates the month of manufacture. Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 1 ATF-50189 Absolute Maximum Ratings 2,4 Thermal Resistance Absolute = 29C/W Symbol Parameter Units Maximum ch b 2 V DrainSource Voltage V7 Notes: DS 1. Operation of this device above any one of 2 V GateSource Voltage V -5 to 0.8 GS these parameters may cause permanent 2 damage. V Gate Drain Voltage V -5 to 1 GD 2. Assumes DC quiescent conditions. 2 I Drain Current A1 DS 3. Board (package belly) temperature T is 25C. B Derate 35 mW/C for T > 85C. I Gate Current mA 12 GS B 4. Channel-to-board thermal resistance 3 P Total Power Dissipation W 2.25 diss measured using 150C Liquid Crystal Measurement method. P RF Input Power dBm 30 in T Channel Temperature C 150 CH T Storage Temperature C -65 to 150 STG ATF-50189 Electrical Specifications T = 25C, DC bias for RF parameters is Vds = 4.5V and Ids = 280 mA unless otherwise specified. A Symbol Parameter and Test Condition Units Min. Typ. Max. Vgs Operational Gate Voltage Vds = 4.5V, Ids = 280 mA V 0.37 0.53 0.72 Vth Threshold Voltage Vds = 4.5V, Ids = 32 mA V 0.38 Idss Saturated Drain Current Vds = 4.5V, Vgs = 0V A 4.1 Gm Transconductance Vds = 4.5V, Gm = Ids/Vgs mmho 175 2294 Vgs = Vgs1 Vgs2 Vgs1 = 0.55V, Vgs2 = 0.5V Igss Gate Leakage Current Vds = 0V, Vgs = -4.5V A 13.8 60 1 NF Noise Figure f = 2 GHz dB 1.1 f = 900 MHz dB 1.0 1 G Gain f = 2 GHz dB 14 15.5 17 f = 900 MHz dB 21.5 rd 1,2 OIP3 Output 3 Order Intercept Point f = 2 GHz dBm 43 45 f = 900 MHz dBm 44 1 P1dB Output Power at 1dB Compression Point f = 2 GHz dBm 27 29 f = 900 MHz dBm 28.5 1 PAE Power Added Efficiency at P1dB f = 2 GHz % 45 62 f = 900 MHz % 49 ACLR Adjacent Channel Leakage Offset BW = 5 MHz dBc 60.0 1,3 Power Ratio Offset BW = 10 MHz dBc 67.8 Notes: 1. Measurements at 2 GHz obtained using production test board described in Figure 1 while measurement at 900 MHz obtained from double stub tuners. 2. i ) 2 GHz OIP3 test condition: F1 = 2 GHz, F2 = 2.005 GHz and Pin = -5 dBm per tone. ii ) 900 MHz OIP3 test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -5 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) - Test Model 1 - Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) - Freq = 2140 MHz - Pin = -5 dBm - Channel Integrate Bandwidth = 3.84 MHz 2 2