36x ATF-36163 1.5 18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic Lead-free Option Available High Electron Mobility Transistor (PHEMT), in the SOT-363 Low Minimum Noise Figure: (SC-70) package. When optimally matched for minimum 1 dB Typical at 12 GHz noise figure, it will provide a noise figure of 1 dB at 12 0.6 dB Typical at 4 GHz GHz and 0.6 dB at 4 GHz. Associated Gain: Additionally, the ATF-36163 has low noise-resistance, 9.4 dB Typical at 12 GHz 15.8 dB Typical at 4 GHz which reduces the sensitivity of noise performance to variations in input impedance match. This feature makes Maximum Available Gain: the design of broad band low noise amplifiers much 11 dB Typical at 12 GHz easier. The performance of the ATF-36163 makes this 17 dB Typical at 4 GHz device the ideal choice for use in the 2nd or 3rd stage Low Cost Surface Mount Small Plastic Package of low noise cascades. The repeatable performance and Tape-and-Reel Packaging Option Available consistency make it appropriate for use in Ku-band Direct Broadcast Satellite (DBS) TV systems, C-band TV Receive Only (TVRO) LNAs, Multichannel Multipoint Distribution Applications Systems (MMDS), X-band Radar detector and other low 12 GHz DBS Downconverters noise amplifiers operating in the 1.5 18 GHz frequency range. 4 GHz TVRO Downconverters S or L Band Low Noise Amplifiers This GaAs PHEMT device has a nominal 0.2 micron gate length with a total gate periphery (width) of 200 microns. Proven gold-based metallization system and nitride Pin Connections and Package Marking passivation assure rugged, reliable devices. SOURCE DRAIN Surface Mount Package SOT-363 (SC-70) SOURCE SOURCE GATE SOURCE Note: Top View. Package marking provides orientation and identification. 36 = Device codeATF-36163 Pin Conn x = Data code character Attention: Observe precautions for ATF-36163 Pkg handling electrostatic sensitive devices. ESD Machine Model (Class A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 1 ATF-36163 Absolute Maximum Ratings Thermal Resistance: Absolute = 160C/W ch-c Symbol Parameter Units Maximum Note: V Drain - Source Voltage V +3 DS 1. Operation of this device above any one of these parameters may cause permanent V Gate - Source Voltage V -3 GS damage. V Gate Drain Voltage V -3.5 GD I Drain Current mA I D dss P Total Power Dissipation mW 180 T P RF Input Power dBm +10 in max T Channel Temperature C 150 CH T Storage Temperature C -65 to 150 STG ATF-36163 Electrical Specifications T = 25C, Z = 50 , V = 1.5 V, I = 10 mA, (unless otherwise noted). C O ds ds Symbol Parameters and Test Conditions Units Min. Typ. Max. 1 1 NF Noise Figure f =12.0 GHz dB 1.2 1.4 1 G Gain at NF f = 12.0 GHz dB 9 10 g Transconductance V = 1.5 V, V = 0 V mS 50 60 m DS GS I Saturated Drain Current V = 1.5 V, V = 0 V mA 15 25 40 dss DS GS V Pinchoff Voltage V = 1.5 V, I = 10% of I V -1.0 -0.35 -0.15 p 10% DS DS dss BV Gate Drain Breakdown Voltage I = 30 A V -3.5 GDO G Note: 1. Measured in a test circuit tuned for a typical device. ATF-36163 Typical Parameters T = 25C, Z = 50 , V = 2 V, I = 15 mA, (unless otherwise noted). C O ds ds Symbol Parameters and Test Conditions Units Typ. F Minimum Noise Figure ( = ) f = 4 GHz dB 0.6 min source opt f = 12 GHz dB 1.0 G Associated Gain f = 4 GHz dB 15.8 a f = 12 GHz dB 9.4 1 G Maximum Available Gain f = 4 GHz dB 17.2 max f = 12 GHz dB 10.9 P Output Power at 1 dB Gain Compression f = 4 GHz dBm 5 1dB under the power matched condition f = 12 GHz dBm 5 V Gate to Source Voltage for I = 15 mA V = 2.0 V V -0.2 GS DS DS Note: 1. Gmax = MAG for K > 1 and Gmax = MSG for K 1, which is shown on the S-parameters tables. 2