X-On Electronics has gained recognition as a prominent supplier of FW261-TL-E MOSFETs across the USA, India, Europe, Australia, and various other global locations. FW261-TL-E MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

FW261-TL-E ON Semiconductor

FW261-TL-E electronic component of ON Semiconductor
FW261-TL-E ON Semiconductor
FW261-TL-E MOSFETs
FW261-TL-E  Semiconductors

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See Product Specifications
Part No. FW261-TL-E
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: FW261-TL-E
A 4.5V Buck DC-DC Converter with Enhanced Current Sharing.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3258: USD 0.1439 ea
Line Total: USD 468.83 
Availability - 24250
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ: 3258  Multiples: 1
Pack Size: 1
Availability Price Quantity
24250
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3258
Multiples : 1
3258 : USD 0.1439

   
Manufacturer
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We are delighted to provide the FW261-TL-E from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FW261-TL-E and other electronic components in the MOSFETs category and beyond.

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The NXP Semiconductor FW261-TL-E is a low-power dual-channel, high-speed power MOSFET gate driver IC. It is designed to drive N-channel MOSFETs and IGBTs used in power switching applications. This gate driver provides fast switching of the MOSFET and IGBT by driving the gate with 2A peak current. It offers an extremely fast switching speed of up to 4MHz with a propagation delay of only 20ns. The device also features adaptive pre-driver current control that ensures an optimum gate charge and minimized switching losses. The IC is housed in a Thermally Enhanced Small Outline (SOT-23) package, making it suitable for power management applications such as DC-DC converters and motor drives.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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