ZVN2106G Green 60V N-CHANNEL ENHANCEMENT MODE VERTICAL MOSFET Features and Benefits Mechanical Data V > 60V Case: SOT223 (BR)DSS R 2 V = 10V Case Material: Molded Plastic, Green Molding Compound. DS(ON) GS Maximum Continuous Drain Current I = 0.71A UL Flammability Classification Rating 94V-0 D Lead-Free Finish RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Matte Tin Finish Qualified to AEC-Q101 Standards for High Reliability Weight: 0.112 grams (Approximate) Applications DC-DC Converters Solenoids / Relay Driver for Automotive SOT223 D G S Top View Equivalent Circuit Pin Out - Top View Ordering Information (Note 4) Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel ZVN2106GTA ZVN2106 7 8 1,000 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See ZVN2106G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Continuous Drain Current I 0.71 A D Pulsed Drain Current (Note 6) I 8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) T =+25C P 2 W A D Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 - - V BVDSS VGS = 0V, ID = 1mA 500 nA V = 60V, V = 0V DS GS - - Zero Gate Voltage Drain Current T = +25C I J DSS 100 A V = 48V, V = 0V, T = +125C DS GS A Gate-Source Leakage I - - 20 nA V = 20V, V = 0V GSS GS DS On-State Drain Current I 2 - - A V = 10V, V = 18V D(ON) GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.8 - 2.4 V V = V , I = 1mA GS(TH) DS GS D Static Drain-Source On-Resistance R - - 2 V = 10V, I = 1.0A DS(ON) GS D Forward Transconductance g 0.3 - - S V = 18V, I = 1.0A fs DS D DYNAMIC CHARACTERISTICS (Note 8) - - 75 Input Capacitance pF Ciss V = 18V, V = 0V, DS GS - - 45 Output Capacitance pF C oss f = 1.0MHz Reverse Transfer Capacitance - - 20 pF C rss Turn-On Delay Time - - 7 ns t D(ON) Turn-On Rise Time - - 8 ns t V = 18V, I = 1A, V = 10V, R DD D GEN Turn-Off Delay Time - - 12 ns t R = 50 D(OFF) GS - - 15 Turn-Off Fall Time t ns F Notes: 5. For a device mounted on 50mm x 50mm x 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 5 February 2015 ZVN2106G Diodes Incorporated www.diodes.com Document number: DS33347 Rev. 4 - 2