C-Capacitance (pF) Normalised RDS(on) and VGS(th) ID - Drain Current (Amps) VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) Gate hreshold Voltage VGS(TH) T N-CHANNEL ENHANCEMENT ZVN4210A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS VGS=3V 3.5V 5V 6V 8V 10V 100 *R = 1.5 DS(on) VGS= * Spice model available 5 10V 9V 8V D 4 G 7V S 3 6V 10 E-Line 5V TO92 Compatible 2 ABSOLUTE MAXIMUM RATINGS. 4V 3.5V 1 PARAMETER SYMBOL VALUE UNIT 3V 2.5V 0 1 Drain-Source Voltage V 100 V 2V DS 0 1 234 5 6 7 8 9 10 10 0.1 1.0 Continuous Drain Current at T =25C I 450 mA amb D VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Pulsed Drain Current I 6A DM Saturation Characteristics On-resistance v drain current Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg 2.6 1000 2.4 900 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 2.2 amb 800 VGS=10V 2.0 700 ID=1.5A PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. VDS=10V 1.8 600 Drain-Source Breakdown BV 100 V I =1mA, V =0V 1.6 500 DSS D GS Voltage 1.4 400 1.2 VGS=VDS 300 Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS ID=1mA 200 1.0 Voltage 0.8 100 Gate-Body Leakage I 100 nA 0 V = 20V, V =0V 0.6 GSS GS DS -50 -25 0 25 50 75 100 125 150 175 200 225 0 2 34 5 1 Zero Gate Voltage Drain I 10 A V =100V, V =0 DSS DS GS ID(on)- Drain Current (Amps) Current 100 V =80V, V =0V, T=125C(2) A Tj-Junction Temperature (C) DS GS Transconductance v drain current Normalised RDS(on) and VGS(th) v Temperature On-State Drain Current(1) I 2.5 A V =25V, V =10V D(on) DS GS Static Drain-Source On-State R 1.5 V =10V,I =1.5A DS(on) GS D Resistance (1) 1.8 V =5V,I =500mA GS D VDD= 20V 50V 16 Forward Transconductance(1)(2g 250 mS V =25V,I =1.5A fs DS D 80V 200 ) 14 ID=1.5A 160 12 Input Capacitance (2) C 100 pF iss 10 Common Source Output C 40 pF V =25V, V =0V, f=1MHz 120 oss DS GS 8 Capacitance (2) 80 6 Reverse Transfer Capacitance C 12 pF Ciss rss 4 (2) 40 2 Coss Turn-On Delay Time (2)(3) t 4ns d(on) Crss 0 0 0 40 60 80 100 20 0 1 2 34 5 6 Rise Time (2)(3) t 8ns r V 25V, I =1.5A DD D VDS-Drain Source Voltage (Volts) Turn-Off Delay Time (2)(3) t 20 ns d(off) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage Fall Time (2)(3) t 30 ns f 3-389 3-388 Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance ()C-Capacitance (pF) Normalised RDS(on) and VGS(th) ID - Drain Current (Amps) VGS-Gate Source Voltage (Volts) gfs-Transconductance (mS) Gate hreshold Voltage VGS(TH) T N-CHANNEL ENHANCEMENT ZVN4210A ZVN4210A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 TYPICAL CHARACTERISTICS FEATURES * 100 Volt V DS VGS=3V 3.5V 5V 6V 8V 10V 100 *R = 1.5 DS(on) VGS= * Spice model available 5 10V 9V 8V D 4 G 7V S 3 6V 10 E-Line 5V TO92 Compatible 2 ABSOLUTE MAXIMUM RATINGS. 4V 3.5V 1 PARAMETER SYMBOL VALUE UNIT 3V 2.5V 0 1 Drain-Source Voltage V 100 V 2V DS 0 1 234 5 6 7 8 9 10 10 0.1 1.0 Continuous Drain Current at T =25C I 450 mA amb D VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Pulsed Drain Current I 6A DM Saturation Characteristics On-resistance v drain current Gate-Source Voltage V 20 V GS Power Dissipation at T =25C P 700 mW amb tot Operating and Storage Temperature Range T :T -55 to +150 C j stg 2.6 1000 2.4 900 ELECTRICAL CHARACTERISTICS (at T = 25C unless otherwise stated). 2.2 amb 800 VGS=10V 2.0 700 ID=1.5A PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. VDS=10V 1.8 600 Drain-Source Breakdown BV 100 V I =1mA, V =0V 1.6 500 DSS D GS Voltage 1.4 400 1.2 VGS=VDS 300 Gate-Source Threshold V 0.8 2.4 V ID=1mA, V = V GS(th) DS GS ID=1mA 200 1.0 Voltage 0.8 100 Gate-Body Leakage I 100 nA 0 V = 20V, V =0V 0.6 GSS GS DS -50 -25 0 25 50 75 100 125 150 175 200 225 0 2 34 5 1 Zero Gate Voltage Drain I 10 A V =100V, V =0 DSS DS GS ID(on)- Drain Current (Amps) Current 100 V =80V, V =0V, T=125C(2) A Tj-Junction Temperature (C) DS GS Transconductance v drain current Normalised RDS(on) and VGS(th) v Temperature On-State Drain Current(1) I 2.5 A V =25V, V =10V D(on) DS GS Static Drain-Source On-State R 1.5 V =10V,I =1.5A DS(on) GS D Resistance (1) 1.8 V =5V,I =500mA GS D VDD= 20V 50V 16 Forward Transconductance(1)(2g 250 mS V =25V,I =1.5A fs DS D 80V 200 ) 14 ID=1.5A 160 12 Input Capacitance (2) C 100 pF iss 10 Common Source Output C 40 pF V =25V, V =0V, f=1MHz 120 oss DS GS 8 Capacitance (2) 80 6 Reverse Transfer Capacitance C 12 pF Ciss rss 4 (2) 40 2 Coss Turn-On Delay Time (2)(3) t 4ns d(on) Crss 0 0 0 40 60 80 100 20 0 1 2 34 5 6 Rise Time (2)(3) t 8ns r V 25V, I =1.5A DD D VDS-Drain Source Voltage (Volts) Turn-Off Delay Time (2)(3) t 20 ns d(off) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage Fall Time (2)(3) t 30 ns f 3-389 3-388 Drain-Source Resistance RDS(on) RDS(on)-Drain Source On Resistance ()