PH6030L,115 NXP

PH6030L N-channel TrenchMOS logic level FET Rev. 01 29 July 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features and benefits Lead-free package Optimized for use in DC-to-DC converters Logic level compatibile Very low switching and conduction losses 1.3 Applications DC-to-DC convertors Switched-mode power supplies Notebook computers Voltage regulators 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C - - 30 V DS j j I drain current T =25C; V =10V; - - 76.7 A D mb GS see Figure 1; see Figure 3 Dynamic characteristics Q gate-drain charge V = 4.5 V; I =25A; -3.1 -nC GD GS D V = 12 V; see Figure 11; DS see Figure 12 Static characteristics R drain-source V =10V; I =25A; -4.7 6 m DSon GS D on-state resistance T = 25 C; see Figure 9; see j Figure 10PH6030L NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1, 2, 3 S source mb D 4G gate mb D mounting base; connected to G drain mbb076 S 1234 SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH6030L LFPAK Plastic single-ended surface-mounted package (LFPAK); SOT669 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 150 C - 30 V DS j j V drain-gate voltage 25 C T 150 C; R =20k -30 V DGR j GS V gate-source voltage -20 20 V GS I drain current V =10V; T = 100 C; see Figure 1 - 48.5 A D GS mb V =10V; T =25C; see Figure 1; - 76.7 A GS mb see Figure 3 I peak drain current t 10 s; pulsed; T =25C; see - 300 A DM p mb Figure 3 P total power dissipation T =25C; see Figure 2 - 62.5 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current t 10 s; pulsed; T = 25 C - 208 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V; T =25C; I =31A; -95 mJ DS(AL)S GS j(init) D avalanche energy V 30 V; t = 0.14 ms; R =50 ; sup p GS unclamped inductive load PH6030L_1 NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 29 July 2008 2 of 12