PHP143NQ04T,127 NXP

PHP143NQ04T N-channel TrenchMOS standard level FET Rev. 03 26 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C; T 175C --40 V DS j j voltage I drain current T =25C; V =10V; --75 A D mb GS see Figure 1; see Figure 3 P total power T = 25 C; see Figure 2 --200W tot mb dissipation Static characteristics R drain-source V =10V; I =25A; T =25C; -4.4 5.2 m DSon GS D j on-state see Figure 9; see Figure 10 resistance Dynamic characteristics Q gate-drain charge V =10V; I =25A; V =32V; -16 - nC GD GS D DS T =25C; see Figure 11 jPHP143NQ04T NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base; connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP143NQ04T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78 hole; 3-lead TO-220AB PHP143NQ04T All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 26 April 2010 2 of 14