GA20SICP12-263 Normally OFF Silicon Carbide V = 1200 V DS Junction Transistor R = 50 m DS(ON) I = 45 A D ( 25C) I = 20 A D ( 145C) h = 80 FE ( 25C) Features Package 175 C Maximum Operating Temperature RoHS Compliant Gate Oxide Free SiC Switch Drain TAB (TAB) Optional Gate Return Pin Drain Gate Exceptional Safe Operating Area (Pin 1) Integrated SiC Schottky Rectifier Excellent Gain Linearity 7 6 5 S Gate Return 4 Temperature Independent Switching Performance S 3 S 2 S Source (Pin 2) 1 S GR Low Output Capacitance G (Pin 3, 4, 5, 6, 7) Positive Temperature Coefficient of R DS,ON Please note: The Source and Gate Return pins 7L D2PAK (TO-263-7L) Suitable for Connecting an Anti-parallel Diode are not exchangeable. Their exchange might lead to malfunction. Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Table of Contents Section I: Absolute Maximum Ratings .......................................................................................................... 1 Section II: Static Electrical Characteristics ................................................................................................... 2 Section III: Dynamic Electrical Characteristics ............................................................................................ 2 Section IV: Figures .......................................................................................................................................... 4 Section V: Driving the GA20SICP12-263 ....................................................................................................... 8 Section VI: Package Dimensions ................................................................................................................. 12 Section VII: SPICE Model Parameters ......................................................................................................... 13 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes Drain Source Voltage V V = 0 V 1200 V DS GS Continuous Drain Current I T = 25C 45 A Fig. 17 D C Continuous Drain Current I T = 145C 20 A Fig. 17 D C Continuous Gate Current I 1.3 A G Continuous Gate Return Current I 1.3 A GR o T = 175 C, I = 20 VJ D,max Turn-Off Safe Operating Area RBSOA A Fig. 19 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD T = 25 C / 145 C, t > 100 ms Power Dissipation P C p 282 / 56 W Fig. 16 tot Storage Temperature T -55 to 175 C stg Nov 2015 Latest version of this datasheet at: GA20SICP12-263 Parameter Symbol Conditions Value Unit Notes Free-Wheeling SiC Diode Repetitive peak reverse voltage V 1200 V RRM Continuous forward current I T 110 C 20 A F C RMS forward current I T 110 C 32 A F(RMS) C Surge non-repetitive forward current, T = 25 C, t = 10 ms 65 C P I A FSM T = 150 C, t = 10 ms Half Sine Wave C P 55 Non-repetitive peak forward current I T = 25 C, t = 10 s 280 A F,max C P 2 2 T = 25 C, t = 10 ms 21 2 C P I t value i dt A s T = 115 C, t = 10 ms C P 15 Thermal Characteristics SiC Junction Transistor Thermal resistance, junction - case R 0.53 C/W Fig. 20 thJC SiC Diode Thermal resistance, junction - case R 0.8 C/W Fig. 21 thJC Section II: Static Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 50 I = 20 A, T = 25 C D j Drain Source On Resistance R I = 20 A, T = 150 C 83 m Fig. 4 DS(ON) D j I = 20 A, T = 175 C D j 95 I = 20 A, I /I = 40, T = 25 C 3.44 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,SAT I = 20 A, I /I = 30, T = 175 C D D G j 3.24 80 V = 8 V, I = 20 A, T = 25 C DS D j DC Current Gain h V = 8 V, I = 20 A, T = 125 C 51 FE DS D j V = 8 V, I = 20 A, T = 175 C DS D j 45 I = 20 A, T = 25 C 2.2 F j FWD forward voltage V V F I = 20 A, T = 175 C F j 4.4 B: Off State V = 1200 V, V = 0 V, T = 25 C 10 DS GS j V = 1200 V, V = 0 V, T = 150 C Drain Leakage Current I DS GS j 20 A Fig. 8 DSS V = 1200 V, V = 0 V, T = 175 C DS GS j 40 V = 20 V, T = 25 C Gate Leakage Current I SG j 20 nA SG Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge V = 0 V, V = 800 V, f = 1 MHz Input Capacitance C GS DS 2870 pF Fig. 9 iss 1260 V = 1 V, f = 1 MHz DS V = 400 V, f = 1 MHz Reverse Transfer/Output Capacitance C /C DS 115 pF Fig. 9 rss oss V = 800 V, f = 1 MHz DS 85 85 V = 400 V DS Total Output Capacitance Charge Qoss nC V = 800 V DS 125 Output Capacitance Stored Energy E V = 0 V, V = 800 V, f = 1 MHz 35 J Fig. 10 OSS GS DS Effective Output Capacitance, I = constant, V = 0 V, V = 0800 V C D GS DS 155 pF oss,tr time related Effective Output Capacitance, V = 0 V, V = 0800 V C GS DS 110 pF oss,er energy related Gate-Source Charge Q V = -53 V 25 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0800 V 80 nC GD GS DS Gate Charge - Total Q 105 nC G Nov 2015 Latest version of this datasheet at: