GA10JT12-263 Normally OFF Silicon Carbide V = 1200 V DS Junction Transistor R = 100 m DS(ON) I = 25 A D ( 25C) I = 10 A D ( 150C) h = 80 FE ( 25C) Features Package 175 C Maximum Operating Temperature Drain Gate Oxide Free SiC Switch TAB Drain (TAB) Optional Gate Return Pin Gate Exceptional Safe Operating Area (Pin 1) Excellent Gain Linearity Temperature Independent Switching Performance 7 6 5 Gate Return 4 Low Output Capacitance S 3 S 2 S S Source 1 (Pin 2) S GR Positive Temperature Coefficient of R G DS,ON (Pin 3, 4, 5, 6, 7) Suitable for Connecting an Anti-parallel Diode 7L D2PAK (TO-263-7L) Please note: The Source and Gate Return pins are not exchangeable. Their exchange might lead to malfunction. Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Table of Contents Section I: Absolute Maximum Ratings .......................................................................................................... 1 Section II: Static Electrical Characteristics ................................................................................................... 2 Section III: Dynamic Electrical Characteristics ............................................................................................ 2 Section IV: Figures .......................................................................................................................................... 3 Section V: Driving the GA10JT12-263 ........................................................................................................... 7 Section VI: Package Dimensions ................................................................................................................. 11 Section VII: SPICE Model Parameters ......................................................................................................... 12 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes Drain Source Voltage V V = 0 V 1200 V DS GS Continuous Drain Current I T = 25C 25 A Fig. 17 D C Continuous Drain Current I T = 150C 10 A Fig. 17 D C Continuous Gate Current I 1.3 A G Continuous Gate Return Current I 1.3 A GR o T = 175 C, I = 10 VJ D,max Turn-Off Safe Operating Area RBSOA A Fig. 19 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD T = 25 C / 150 C, t > 100 ms Power Dissipation P C p 170 / 22 W Fig. 16 tot Storage Temperature T -55 to 175 C stg Nov 2015 Latest version of this datasheet at: GA10JT12-263 Section II: Static Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 100 I = 10 A, T = 25 C D j Drain Source On Resistance R I = 10 A, T = 150 C 155 m Fig. 5 DS(ON) D j I = 10 A, T = 175 C D j 175 I = 10 A, I /I = 40, T = 25 C 3.50 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,SAT I = 10 A, I /I = 30, T = 175 C D D G j 3.27 80 V = 8 V, I = 10 A, T = 25 C DS D j DC Current Gain h V = 8 V, I = 10 A, T = 125 C 52 Fig. 4 FE DS D j V = 8 V, I = 10 A, T = 175 C DS D j 46 B: Off State 0.1 V = 1200 V, V = 0 V, T = 25 C DS GS j Drain Leakage Current I V = 1200 V, V = 0 V, T = 150 C 0.1 A Fig. 8 DSS DS GS j V = 1200 V, V = 0 V, T = 175 C DS GS j 0.2 Gate Leakage Current I V = 20 V, T = 25 C 20 nA SG SG j C: Thermal Thermal resistance, junction - case R 0.88 C/W Fig. 20 thJC Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge Input Capacitance C V = 0 V, V = 800 V, f = 1 MHz 1275 pF Fig. 9 iss GS DS Reverse Transfer/Output Capacitance C /C V = 800 V, f = 1 MHz 30 pF Fig. 9 rss oss DS Output Capacitance Stored Energy E V = 0 V, V = 800 V, f = 1 MHz 12 J Fig. 10 OSS GS DS Effective Output Capacitance, C I = constant, V = 0 V, V = 0800 V 54 pF oss,tr D GS DS time related Effective Output Capacitance, C V = 0 V, V = 0800 V 38 pF oss,er GS DS energy related V = -53 V Gate-Source Charge Q GS 11 nC GS Gate-Drain Charge Q V = 0 V, V = 0800 V 56 nC GD GS DS Gate Charge - Total Q 67 nC G 1 B: Switching Internal Gate Resistance ON R V > 2.5 V, V = 0 V, T = 175 C 0.19 G(INT-ON) GS DS j Turn On Delay Time t 10 ns d(on) T = 25 C, V = 800 V, j DS Fall Time, V t I = 10 A, Resistive Load 10 ns Fig. 11, 13 DS f D Refer to Section V for additional Turn Off Delay Time t 22 ns d(off) driving information. Rise Time, V t 10 ns Fig. 12, 14 DS r Turn On Delay Time t 10 ns d(on) Fall Time, V t 10 ns Fig. 11 DS f T = 175 C, V = 800 V, j DS I = 10 A, Resistive Load Turn Off Delay Time t D 35 ns d(off) Rise Time, V t 10 ns Fig. 12 DS r Turn-On Energy Per Pulse E 140 J Fig. 11, 13 on T = 25 C, V = 800 V, j DS I = 10 A, Inductive Load 10 Turn-Off Energy Per Pulse E D J Fig. 12, 14 off Refer to Section V. Total Switching Energy E 150 J tot Turn-On Energy Per Pulse E 140 J Fig. 11 on T = 175 C, V = 800 V, j DS Turn-Off Energy Per Pulse E 100 J Fig. 12 off I = 10 A, Inductive Load D Total Switching Energy E 150 J tot 1 All times are relative to the Drain-Source Voltage V DS Nov 2015 Latest version of this datasheet at: