PHP29N08T,127 Nexperia

PHP29N08T N-channel TrenchMOS standard level FET Rev. 02 12 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits High noise immunity due to high gate Low conduction losses due to low threshold voltage on-state resistance 1.3 Applications Industrial motor control 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current T =25C V =11V --27 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --88 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =29A -9 -nC GD GS D V =60V T =25C DS j see Figure 11 Static characteristics R drain-source V =11V I =14A - 96 120 m DSon GS D on-state resistance T = 175 C see Figure 9 j see Figure 10 V =11V I =14A - 4050m GS D T = 25 C see Figure 9 j see Figure 10Nexperia PHP29N08T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base, connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP29N08T TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 75 V DS j j V drain-gate voltage T 175 C T 25 C R =20k -75 V DGR j j GS V gate-source voltage -30 30 V GS I drain current V =11V T = 100 C see Figure 1 -19.2 A D GS mb V =11V T =25C see Figure 1 -27 A GS mb see Figure 3 I peak drain current t 10 s pulsed T =25C see Figure 3 -108 A DM p mb P total power dissipation T =25C see Figure 2 -88 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 27 A S mb I peak source current t 10 s pulsed T =25C - 108 A SM p mb PHP29N08T 2 Product data sheet Rev. 02 12 March 2009 2 of 12 Nexperia B.V. 2017. All rights reserved