PHK04P02T,518 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHK04P02T P-channel vertical D-MOS logic level FET Rev. 02 14 December 2010 Product data sheet 1. Product profile 1.1 General description Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency Suitable for logic level gate drive applications due to fast switching sources characteristics Suitable for very low gate drive sources voltage 1.3 Applications Battery powered applications High-speed digital interfaces 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C ---16 V DS j j I drain current T=25C ---4.6 A D sp 6 P total power --5 W tot dissipation Static characteristics R drain-source on-state V =-2.5V I =-1A T =25C - 117 150 m DSon GS D j resistance V =-4.5V I =-1A T = 25 C - 80 120 m GS D j Dynamic characteristics Q gate-drain charge V =-4.5V I =-1A -1.83- nC GD GS D V =-10 V T =25C DS j