PHKD13N03LT,518 NXP

PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 5 27 December 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics Simple gate drive required due to low gate charge 1.3 Applications DC-to-DC convertors Notebook computers Lithium-ion battery applications Portable equipment 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T 25 C T 150C --30 V V DS j j 1 drain current T =25C V =10V see Figure 1 - - 10.4 A I D sp GS see Figure 3 P total power dissipation T =25C see Figure 2 --3.57W tot sp Static characteristics R drain-source on-state resistance V =10 V I =8A T =25C - 1720m DSon GS D j see Figure 9 see Figure 10 Dynamic characteristics Q gate-drain charge V =5 V I =5A V =15V -3.9 -nC GD GS D DS T =25C see Figure 11 j 1 Single device conducting.PHKD13N03LT Nexperia Dual N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 D2 8 5 D1 D1 D2 2 G1 gate1 3S2 source2 4 G2 gate2 5D2 drain2 1 4 6D2 drain2 SOT96-1 (SO8) S1 G1 S2 G2 7D1 drain1 mbk725 8D1 drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHKD13N03LT SO8 plastic small outline package 8 leads body width 3.9 mm SOT96-1 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 30 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current T =100 C V =10V see Figure 1 -6.6 A D sp GS 1 T =25C V =10V see Figure 1 - 10.4 A sp GS see Figure 3 1 I peak drain current T = 25 C pulsed t 10 s see Figure 3 -42 A DM sp p P total power dissipation T =25C see Figure 2 -3.57W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode 1 I source current T =25C -3.2 A S sp 1 I peak source current T = 25 C pulsed t 10 s -42 A SM sp p 1 Single device conducting. PHKD13N03LT All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 5 27 December 2011 2 of 13