PHP54N06T,127 NXP

PHP54N06T N-channel TrenchMOS standard level FET Rev. 02 14 December 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for thermally demanding on-state resistance environments due to 175 C rating 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C V =10V --54 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 --118 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =40A - 11.5 - nC GD GS D V =44V T =25C DS j see Figure 13 Static characteristics R drain-source V =10V I =25A --40 m DSon GS D on-state resistance T = 175 C see Figure 11 and 12 j V =10V I =25 A T =25C - 1720m GS D j see Figure 11 and 12NXP Semiconductors PHP54N06T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP54N06T TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R =20k -55 V DGR GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -38 A D GS mb V =10V T =25C see Figure 1 and 3 -54 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -217 A DM p mb P total power dissipation T =25C see Figure 2 -118 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 54 A S mb I peak source current t 10 s pulsed T =25C - 217 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =48A V 55 V -115 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped R =50 GS energy PHP54N06T 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 14 December 2009 2 of 12