GA05JT03-46 Normally OFF Silicon Carbide V = 300 V DS Junction Transistor R = 240 m DS(ON) I = 9 A D (Tc = 25C) h = 110 FE (Tc = 25C) Features Package 210C maximum operating temperature RoHS Compliant Gate Oxide Free SiC Switch D Exceptional Safe Operating Area Excellent Gain Linearity G Compatible with 5 V TTL Gate Drive Temperature Independent Switching Performance D Low Output Capacitance G S S Positive Temperature Coefficient of R DS,ON Suitable for Connecting an Anti-parallel Diode TO-46 Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling > 20 s Short-Circuit Withstand Capability Geothermal Instrumentation Lowest-in-class Conduction Losses Solenoid Actuators High Circuit Efficiency General Purpose High-Temperature Switching Minimal Input Signal Distortion Amplifiers High Amplifier Bandwidth Solar Inverters Switched-Mode Power Supply (SMPS) Power Factor Correction (PFC) Table of Contents Section I: Absolute Maximum Ratings ...........................................................................................................1 Section II: Electrical Characteristics...............................................................................................................2 Section III: Dynamic Electrical Characteristics .............................................................................................2 Section IV: Figures ...........................................................................................................................................3 Section V: Driving the GA05JT03-46...............................................................................................................7 Section VI: Package Dimensions ................................................................................................................. 10 Section VII: SPICE Model Parameters ......................................................................................................... 11 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes V = 0 V Drain Source Voltage V GS 300 V DS Continuous Drain Current I T = 210C, T = 25C 5.8 A D J C Continuous Gate Current I 0.5 A GM T = 210C, I = 0.5 A, I = 9 VJ G D,max Turn-Off Safe Operating Area RBSOA A Fig. 18 Clamped Inductive Load V V DS DSmax T = 210C, I = 0.5 A, V = 200 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD Power Dissipation P T = 210C, T = 25C 20 W Fig. 16 tot J C Storage Temperature T -55 to 210 C stg Dec 2014 GA05JT03-46 Section II: Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 240 I = 5 A, T = 25 C D j I = 5 A, T = 125 C 368 D j Drain Source On Resistance R m Fig. 5 DS(ON) I = 5 A, T = 175 C D j 455 I = 5 A, T = 210 C D j 580 I = 5 A, I /I = 40, T = 25 C 3.45 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,sat ID = 5 A, ID/IG = 30, Tj = 175 C 3.22 113 VDS = 5 V, ID = 5 A, Tj = 25 C 79 V = 5 V, I = 5 A, T = 125 C DS D j DC Current Gain h Fig. 5 FE V = 5 V, I = 5 A, T = 175 C 72 DS D j V = 5 V, I = 5 A, T = 210 C DS D j 70 B: Off State 10 100 V = 300 V, V = 0 V, T = 25 C R GS j Drain Leakage Current I V = 300 V, V = 0 V, T = 125 C 50 500 nA Fig. 6 DSS R GS j V = 300 V, V = 0 V, T = 210 C R GS j 100 1000 Gate Leakage Current I V = 20 V, T = 25 C 20 nA SG SG j C: Thermal Assumes thermal conduction through Thermal resistance, junction - case RthJC 9.86 C/W Fig. 19 baseplate only actual value may be lower Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge Input Capacitance C VGS = 0 V, VD = 300 V, f = 1 MHz 527 pF Fig. 9 iss V = 300 V, f = 1 MHz Reverse Transfer/Output Capacitance C /C D 24 pF Fig. 9 rss oss Output Capacitance Stored Energy E V = 0 V, V = 300 V, f = 1 MHz 1.1 J Fig. 10 OSS GS D Effective Output Capacitance, C I = constant, V = 0 V, V = 0800 V 51 pF oss,tr D GS DS time related Effective Output Capacitance, V = 0 V, V = 080 V C GS DS 41 pF oss,er energy related Gate-Source Charge Q V = -53 V 3.7 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0200 V 10.9 nC GD GS DS Gate Charge - Total Q 14.6 nC G B: Switching f = 1 MHz, V = 50 mV, V = V = 0 V , AC DS GS Internal Gate Resistance zero bias R 14.5 G(INT-ZERO) T = 210 C j Internal Gate Resistance ON R V > 2.5 V, V = 0 V, T = 210 C 0.37 G(INT-ON) GS DS j Turn On Delay Time t 13.0 ns d(on) T = 25 C, V = 200 V, j DS Fall Time, V t I = 5 A, Resistive Load 12.4 ns Fig. 11, 13 DS f D Refer to Section V: for additional driving Turn Off Delay Time t 12.0 ns d(off) information 6.6 Rise Time, V t ns Fig. 12, 14 DS r Turn On Delay Time t 7.0 ns d(on) T = 210 C, V = 200 V, j DS Fall Time, V t 12.2 ns Fig. 11 DS f I = 5 A, Resistive Load D Refer to Section V: for additional driving Turn Off Delay Time t 30.0 ns d(off) information Rise Time, V t 6.9 ns Fig. 12 DS r Turn-On Energy Per Pulse E 20.6 J Fig. 11, 13 on T = 25 C, V = 200 V, j DS Turn-Off Energy Per Pulse E 1.0 J Fig. 12, 14 off I = 5 A, Inductive Load D Total Switching Energy E 21.6 J tot Turn-On Energy Per Pulse E 18.4 J Fig. 11 on T = 210 C, V = 200 V, j DS Turn-Off Energy Per Pulse E 0.6 J Fig. 12 off I = 5 A, Inductive Load D Total Switching Energy E 19.0 J tot 1 All times are relative to the Drain-Source Voltage V DS Dec 2014