GA10SICP12-263 Normally OFF Silicon Carbide V = 1200 V DS Junction Transistor R = 100 m DS(ON) I = 25 A D ( 25C) I = 10 A D ( 150C) h = 80 FE ( 25C) Features Package 175 C Maximum Operating Temperature Drain Gate Oxide Free SiC Switch TAB (TAB) Optional Gate Return Pin Drain Gate Exceptional Safe Operating Area (Pin 1) Integrated SiC Schottky Rectifier Excellent Gain Linearity 7 6 5 Gate Return 4 S S Temperature Independent Switching Performance 3 S 2 S Source (Pin 2) 1 S GR Low Output Capacitance G (Pin 3, 4, 5, 6, 7) Positive Temperature Coefficient of R DS,ON 7L D2PAK (TO-263-7L) Please note: The Source and Gate Return Suitable for Connecting an Anti-parallel Diode pins are not exchangeable. Their exchange might lead to malfunction. Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Table of Contents Section I: Absolute Maximum Ratings .......................................................................................................... 1 Section II: Static Electrical Characteristics ................................................................................................... 2 Section III: Dynamic Electrical Characteristics ............................................................................................ 2 Section IV: Figures .......................................................................................................................................... 4 Section V: Driving the GA10SICP12-263 ....................................................................................................... 8 Section VI: Package Dimensions ................................................................................................................. 12 Section VII: SPICE Model Parameters ......................................................................................................... 13 Section I: Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes Drain Source Voltage V V = 0 V 1200 V DS GS Continuous Drain Current I T = 25C 25 A Fig. 17 D C Continuous Drain Current I T = 150C 10 A Fig. 17 D C Continuous Gate Current I 1.3 A G Continuous Gate Return Current I 1.3 A GR o T = 175 C, I = 10 VJ D,max Turn-Off Safe Operating Area RBSOA A Fig. 19 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA >20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD T = 25 C / 150 C, t > 100 ms Power Dissipation P C p 170 / 22 W Fig. 16 tot Storage Temperature T -55 to 175 C stg Nov 2015 Latest version of this datasheet at: GA10SICP12-263 Parameter Symbol Conditions Value Unit Notes Free-Wheeling SiC Diode Repetitive peak reverse voltage V 1200 V RRM T 150 C Continuous forward current I C 10 A F RMS forward current I T 150 C 17 A F(RMS) C Surge non-repetitive forward current, 65 T = 25 C, t = 10 ms C P I A FSM T = 150 C, t = 10 ms Half Sine Wave C P 55 Non-repetitive peak forward current I T = 25 C, t = 10 s 280 A F,max C P 2 2 T = 25 C, t = 10 ms 21 2 C P I t value i dt A s T = 115 C, t = 10 ms C P 15 Section II: Static Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: On State 100 I = 10 A, T = 25 C D j Drain Source On Resistance R I = 10 A, T = 150 C 155 m Fig. 4 DS(ON) D j I = 10 A, T = 175 C D j 175 I = 10 A, I /I = 40, T = 25 C 3.50 D D G j Gate Source Saturation Voltage V V Fig. 7 GS,SAT I = 10 A, I /I = 30, T = 175 C D D G j 3.27 80 V = 8 V, I = 10 A, T = 25 C DS D j DC Current Gain h V = 8 V, I = 10 A, T = 125 C 52 FE DS D j V = 8 V, I = 10 A, T = 175 C DS D j 46 I = 10 A, T = 25 C 1.6 F j FWD forward voltage V V F I = 10 A, T = 175 C F j 2.5 B: Off State V = 1200 V, V = 0 V, T = 25 C 10 DS GS j Drain Leakage Current I V = 1200 V, V = 0 V, T = 150 C 20 A Fig. 8 DSS DS GS j V = 1200 V, V = 0 V, T = 175 C DS GS j 50 V = 20 V, T = 25 C Gate Leakage Current I SG j 20 nA SG C: Thermal SiC Junction Transistor 0.88 Thermal resistance, junction - case R C/W Fig. 20 thJC Thermal resistance, junction - case R SiC Diode 0.8 C/W Fig. 21 thJC Section III: Dynamic Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. A: Capacitance and Gate Charge V = 0 V, V = 800 V, f = 1 MHz Input Capacitance C GS DS 1400 pF Fig. 9 iss 760 V = 1 V, f = 1 MHz DS V = 400 V, f = 1 MHz Reverse Transfer/Output Capacitance C /C DS 80 pF rss oss V = 800 V, f = 1 MHz DS 60 56 V = 400 V DS Total Output Capacitance Charge Qoss nC V = 800 V DS 80 Output Capacitance Stored Energy E V = 0 V, V = 800 V, f = 1 MHz 25 J Fig. 10 OSS GS DS Effective Output Capacitance, I = constant, V = 0 V, V = 0800 V C 100 pF oss,tr D GS DS time related Effective Output Capacitance, V = 0 V, V = 0800 V C GS DS 75 pF oss,er energy related Gate-Source Charge Q V = -53 V 10 nC GS GS Gate-Drain Charge Q V = 0 V, V = 0800 V 55 nC GD GS DS Gate Charge - Total Q 65 nC G Nov 2015 Latest version of this datasheet at: