PHP78NQ03LT,127 NXP

PHP78NQ03LT N-channel TrenchMOS logic level FET Rev. 06 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency Suitable for logic level gate drive applications due to fast switching sources characteristics 1.3 Applications Computer motherboards DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 25 V DS j j I drain current V =10V T=25C --75 A D GS mb P total power T = 25 C see Figure 2 --93 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =50A -4.2 5.6 nC GD GS D V =15V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -7.659 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10NXP Semiconductors PHP78NQ03LT N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP78NQ03LT TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB PHP78NQ03LT 6 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 06 30 January 2009 2 of 13