CDM22012-800LRFP
www.centralsemi.com
N-CHANNEL
LR POWER MOSFET
DESCRIPTION:
12 AMP, 800 VOLT
The CENTRAL SEMICONDUCTOR CDM22012-800LRFP
is an 800 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This MOSFET combines high voltage capability with
ultra low r , low threshold voltage, and low gate
DS(ON)
charge for optimal efficiency.
MARKING CODE: CDM12-800LR
TO-220FP CASE
APPLICATIONS: FEATURES:
Power Factor Correction
High voltage capability (V =800V)
DS
Alternative energy inverters
Low gate charge (Q =7.6nC TYP)
gs
Solid State Lighting (SSL)
Ultra low r (0.37 TYP)
DS(ON)
MAXIMUM RATINGS: (T =25C unless otherwise noted)
C
SYMBOL UNITS
Drain-Source Voltage V 800 V
DS
Gate-Source Voltage V 30 V
GS
Continuous Drain Current (Steady State) I 12 A
D
Continuous Drain Current (T =100C Steady State) I 7.7 A
C D
Maximum Pulsed Drain Current, tp=10s I 48 A
DM
Continuous Source Current (Body Diode) I 12 A
S
Maximum Pulsed Source Current (Body Diode) I 48 A
SM
Single Pulse Avalanche Energy (Note 1) E 702 mJ
AS
Power Dissipation P 40 W
D
Operating and Storage Junction Temperature T , T -55 to +150 C
J stg
Thermal Resistance 3.13 C/W
JC
Thermal Resistance 62.5 C/W
JA
Note 1: L=79mH, I =4.0A, V =100V, R =25, Initial T =25C
AS DD G J
ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I , I V =30V, V=0 100 nA
GSSF GSSR GS DS
I V =800V, V=0 1.0 A
DSS DS GS
BV V =0, I=250A 800 V
DSS GS D
V V =V , I=250A 2.0 4.0 V
GS(th) GS DS D
V V =0, I=12A 1.4 V
SD GS S
r V =10V, I=6.0A 0.37 0.45
DS(ON) GS D
C V =100V, V =0, f=1.0MHz 9.5 pF
rss DS GS
C V =100V, V =0, f=1.0MHz 1,090 pF
iss DS GS
C V =100V, V =0, f=1.0MHz 55.2 pF
oss DS GS
R1 (7-March 2016)CDM22012-800LRFP
N-CHANNEL
LR POWER MOSFET
12 AMP, 800 VOLT
ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted)
C
SYMBOL TEST CONDITIONS TYP UNITS
Q V =640V, V =10V, I =12A (Note 2) 52.4 nC
g(tot) DD GS D
Q V =640V, V =10V, I =12A (Note 2) 7.6 nC
gs DD GS D
Q V =640V, V =10V, I =12A (Note 2) 31.4 nC
gd DD GS D
t V =400V, V =10V, I =12A, R =24 (Note 2) 21.1 ns
d(on) DD GS D G
t V =400V, V =10V, I =12A, R =24 (Note 2) 44.8 ns
r DD GS D G
t V =400V, V =10V, I =12A, R =24 (Note 2) 171.2 ns
d(off) DD GS D G
t V =400V, V =10V, I =12A, R =24 (Note 2) 42.5 ns
f DD GS D G
t V =0, I =12A, di/dt=100A/s (Note 2) 430 ns
rr GS S
Q V =0, I =12A, di/dt=100A/s (Note 2) 6.5 C
rr GS S
Note 2: Pulse Width < 300s, Duty Cycle < 2%
TO-220FP CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING CODE: CDM12-800LR
R1 (7-March 2016)
www.centralsemi.com