GMM3x60-015X2 V = 150 V DSS Three phase full Bridge I = 50 A with Trench MOSFETs D25 R = 19 mW in DCB isolated high current package DSon typ. L1+ L2+ L3+ G1 G3 G5 S1 S3 S5 L1 L2 L3 G2 G4 G6 S2 S4 S6 L1- L2- L3- Applications MOSFETs AC drives Symbol Conditions Maximum Ratings in automobiles V T = 25C to 150C 150 V DSS VJ - electric power steering - starter generator V continous 15 V GS in industrial vehicles transient 20 V - propulsion drives I T = 25C 50 A D25 C - fork lift drives I T = 90C 38 A D90 C in battery supplied equipment I T = 110C 33 A D110 C I T = 25C (diode) 150 A F25 C Features I T = 90C (diode) 85 A F90 C MOSFETs in trench technology: I T = 110C (diode) 65 A F110 C - low RDSon - optimized intrinsic reverse diode Symbol Conditions Characteristic Values package: (T = 25C, unless otherwise specified) VJ - high level of integration min. typ. max. - high current capability 1) R on chip level at T = 25C 19 24 mW DSon VJ - aux. terminals for MOSFET control V = 10 V I = 38 A T = 125C 38 mW GS D VJ - terminals for soldering or welding connections V V = 20 V I = 1 mA 2.5 4.5 V GS(th) DS D - isolated DCB ceramic base plate I V = V V = 0 V T = 25C 5 A DSS DS DSS GS VJ with optimized heat transfer T = 125C 0.5 mA VJ Space and weight savings I V = 20 V V = 0 V 0.2 A GSS GS DS Q 97 nC g Q V = 10 V V = 75 V I = 38 A 29 nC gs GS DS D Q 30 nC gd C 5800 pF iss C V = 10 V V = 25 V f = 1 MHz 490 pF oss GS DS C 85 pF rss t 120 ns d(on) t 50 ns r inductive load t 100 ns d(off) V = 10 V V = 75 V GS DS t 25 ns f I = 38 A R = 39 W R = 4.7 W D G(on) G(off) E 0.25 mJ on T = 125C J E 0.05 mJ off E 0.02 mJ recoff R 1.0 K/W thJC R with heat transfer paste (IXYS test setup) 1.3 1.6 K/W thJH 1) V = I (R + 2R ) DS D DS(on) Pin to Chip IXYS reserves the right to change limits, test conditions and dimensions. 20170529c 2017 IXYS All rights reserved 1 - 6GMM3x60-015X2 Source-Drain Diode Symbol Conditions Characteristic Values (T = 25C, unless otherwise specified) J min. typ. max. V (diode) I = 38 A V = 0 V 0.85 1.0 V SD F GS t 65 ns rr I = 38 A -di /dt = 900 A/s F F Q 1.6 C RM R = 39 W V = 75 V T = 125C G(on) R VJ I 40 A RM Component Symbol Conditions Maximum Ratings I per pin in main current paths (L+,L-, N-, L1, L2, L3) 75 A RMS may be additionally limited by external connections 2 pins for output L1, L2, L3 T -55...+175 C J T -55...+125 C stg V I < 1 mA, 50/60 Hz, f = 1 minute 1000 V~ ISOL ISOL F mounting force with clip 50 - 250 N C Symbol Conditions Characteristic Values min. typ. max. 1) R L+ to L1/L2/L3 or L- to L1/L2/L3 0.9 mW pin to chip coupling capacity between shorted 160 C pF P pins and back side metallization Weight 13 g 1) V = I (R + 2R ) DS D DS(on) Pin to Chip Recommended printed circuit board lay-out IXYS reserves the right to change limits, test conditions and dimensions. 20170529c 2017 IXYS All rights reserved 2 - 6