Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 15 December 2010 Product data sheet 1. Product profile 1.1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for high frequency Suitable for logic level gate drive applications due to fast switching sources characteristics Suitable for low gate drive sources 1.3 Applications DC-to-DC converters Motor and relay drivers Logic level translators 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 150 C --30 V DS j j voltage Repetitive peak drain-source voltage 1 I drain current T = 25 C Single device --3.4 A D sp 2 P total power T =25C --2 W tot sp dissipation Static characteristics R drain-source V =4.5 V I =1A -120200m DSon GS D on-state T =25C j resistance V =10V I =2.2 A -80 100m GS D T =25C j Dynamic characteristics Q gate-drain charge V =10V I =2.3 A -0.7 -nC GD GS D V =15 V T =25C DS j 1 Surface mounted on FR4 board, t 10 sec. 2 Surface mounted on FR4, t 10 sec.