PHP32N06LT,127 NXP

PHP32N06LT N-channel TrenchMOS logic level FET Rev. 02 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for logic level gate drive sources 1.3 Applications General purpose switching Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =5V --34 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =20A -8.5 -nC GD GS D V =44V T =25C DS j see Figure 12 Static characteristics R drain-source V = 4.5 V I =20A - 31.5 43 m DSon GS D on-state resistance T =25C j V =5V I =20A - 3040m GS D T =25C j see Figure 10 and 11NXP Semiconductors PHP32N06LT N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP32N06LT TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB PHP32N06LT 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 30 November 2009 2 of 12