PHP45NQ10T,127 Nexperia

PHP45NQ10T N-channel TrenchMOS standard level FET Rev. 02 8 July 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage I drain current T =25C V=10V --47 A D mb GS P total power T=25C --150W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 2225m DSon GS D on-state T =25C j resistance Dynamic characteristics Q gate-drain charge V =10V I =45A -25 -nC GD GS D V =80 V T =25C DS jPHP45NQ10T Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP45NQ10T TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PHP45NQ10T All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 8 July 2010 2 of 12