PHB66NQ03LT,118 Nexperia

PHB66NQ03LT N-channel TrenchMOS logic level FET Rev. 07 30 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors General purpose switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 25 V DS j j I drain current T =25C V=10V --66 A D mb GS P total power T = 25 C see Figure 2 --93 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =50A -3.6 -nC GD GS D V =15V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A - 9.1 10.5 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10Nexperia PHB66NQ03LT N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB66NQ03LT D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) PHB66NQ03LT 7 Product data sheet Rev. 07 30 January 2009 2 of 13 Nexperia B.V. 2017. All rights reserved