PHD13005,127 NXP

PHD13005 NPN power transistor with integrated diode Rev.03 - 30 March 2018 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel E-C diode in a SOT78 (TO-220AB) plastic package. 2. Features and benefits Low thermal resistance Fast switching High voltage capability Integrated anti-parallel E-C diode 3. Applications Integrated fluorescent lamp ballasts e.g. high power cluster lamps Low Voltage Tungsten Halogen transformers Remote fluorescent lamp ballasts Self Oscillating Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V collector-emitter peak V = 0 V 700 V CESM BE voltage I DC Fig. 1 Fig. 2 Fig. 4 4 A C collector current P total power dissipation T 25 C Fig. 3 75 W tot mb Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 1.0 A V = 5 V Fig. 10 12 20 40 FE C CE I = 2.0 A V = 5 V Fig. 10 10 17 28 C CEWeEn Semiconductors PHD13005 NPN power transistor with integrated diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base 2 C collector 3 E emitter mb C mounting base connected to collector 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD13005 TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB PHD13005 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 2 / 15