PHB32N06LT,118 Nexperia

PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Suitable for logic level gate drive sources 1.3 Applications General purpose switching Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =5V --34 A D mb GS see Figure 1 and 3 P total power T =25C --97 W tot mb dissipation see Figure 2 Dynamic characteristics Q gate-drain charge V =5V I =20A -8.5 -nC GD GS D V =44V T =25C DS j see Figure 11 Static characteristics R drain-source V = 4.5 V I =20A - 31.5 43 m DSon GS D on-state resistance T =25C j V =5V I =20A - 3040m GS D T =25C j see Figure 9 and 10Nexperia PHB32N06LT N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHB32N06LT D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads (one SOT404 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage R =20k -60 V DGR GS V gate-source voltage -15 15 V GS I drain current V =5V T = 100 C see Figure 1 -24 A D GS mb V =5V T =25C see Figure 1 and 3 -34 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -136 A DM p mb P total power dissipation T =25C see Figure 2 -97 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j V peak gate-source pulsed t 50 s -20 20 V GSM p voltage Source-drain diode I source current T =25C - 34 A S mb I peak source current t 10 s pulsed T =25C - 136 A SM p mb Avalanche ruggedness E non-repetitive V =5V T =25C I =20A V 25 V -100 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t = 0.11 ms R =50 p GS energy PHB32N06LT 2 Product data sheet Rev. 02 30 November 2009 2 of 11 Nexperia B.V. 2017. All rights reserved