PH8230E,115 Nexperia

PH8230E N-channel TrenchMOS logic level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Simple gate drive required due to low thermal resistance gate charge Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Portable equipment Notebook computers Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 30 V DS j j I drain current T =25C V =10V --67 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 62.5 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =20 A V 10 V -5 -nC GD GS D DS T = 25 C see Figure 11 j Static characteristics R drain-source V =10V I =10A -7.6 8.2 m DSon GS D on-state resistance T = 25 C see Figure 9 and 10 jNXP Semiconductors PH8230E N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH8230E LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 30 V DS j j V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -42 A D GS mb V =10V T =25C see Figure 1 and 3 -67 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -268 A DM p mb P total power dissipation T =25C see Figure 2 -62.5 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current t 10 s pulsed T =25C - 150 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I = 33.9 A V =30V -115 mJ DS(AL)S GS j(init) D sup drain-source avalanche t = 0.15 ms unclamped p energy PH8230E 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 17 November 2009 2 of 12