X-On Electronics has gained recognition as a prominent supplier of PH2520U,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. PH2520U,115 MOSFET are a product manufactured by NXP. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PH2520U,115 NXP

PH2520U,115 electronic component of NXP
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Part No.PH2520U,115
Manufacturer: NXP
Category: MOSFET
Description: MOSFET N-CH TRENCH 20V
Datasheet: PH2520U,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 1.678 ea
Line Total: USD 2517

Availability - 0
MOQ: 1500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1500
Multiples : 1
1500 : USD 1.678
1500 : USD 1.678
1500 : USD 1.6296
1500 : USD 1.6055
1500 : USD 1.5693
4500 : USD 1.5693

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the PH2520U,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PH2520U,115 and other electronic components in the MOSFET category and beyond.

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PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Low conduction losses due to low thermal resistance on-state resistance Interfaces directly with low voltage gate drivers 1.3 Applications DC-to-DC convertors Portable equipment Notebook computers Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 20 V DS j j I drain current T =25C V =4.5 V - - 100 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 62.5 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =50A -18 - nC GD GS D V =10V T =25C DS j see Figure 11 see Figure 12 Static characteristics R drain-source V = 4.5 V I =25A -2.1 2.7 m DSon GS D on-state resistance T = 25 C see Figure 9 j see Figure 10NXP Semiconductors PH2520U N-channel TrenchMOS ultra low level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH2520U LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 20 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -20 V DGR j j GS V gate-source voltage -10 10 V GS I drain current V =4.5 V T = 100 C see Figure 1 -73 A D GS mb V =4.5 V T =25 C see Figure 1 -100 A GS mb see Figure 3 I peak drain current t 10 s pulsed T =25C see Figure 3 -300 A DM p mb P total power dissipation T =25C see Figure 2 -62.5 W tot mb T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 52 A S mb I peak source current t 10 s pulsed T =25C - 150 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =70.7A R =50 -250 mJ DS(AL)S GS j D GS drain-source avalanche V 20 V t = 0.1 ms unclamped sup p energy PH2520U 3 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 2 March 2009 2 of 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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