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PH2525L,115

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Datasheet

Trans MOSFET N-CH 25V 100A 5-Pin(4+Tab) LFPAK T/R

Manufacturer: NXP

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

28: USD 1.3562 ea
Line Total: USD 37.97

0 - Global Stock

MOQ: 28 Multiples: 1
Pack Size: 1

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Additional Infomation About Product

PH2525L N-channel TrenchMOS logic level FET Rev. 02 5 December 2006 Product data sheet 1. Product prole 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Logic level threshold n Lead-free package n Optimized for use in DC-to-DC n Very low switching and conduction converters losses n 100 % R tested G 1.3 Applications n DC-to-DC converters n Switched-mode power supplies n Voltage regulators n PC Motherboards 1.4 Quick reference data n V 25 V n I 100 A DS D n R 2.5 m n Q = 6.8 nC (typ) DSon GD 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1, 2, 3 source (S) D mb 4 gate (G) mb mounting base; connected to drain (D) G mbb076 S 1234 SOT669 (LFPAK)PH2525L NXP Semiconductors N-channel TrenchMOS logic level FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PH2525L LFPAK plastic single-ended surface-mounted package; 4 leads SOT669 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 150 C - 25 V DS j V drain-gate voltage (DC) 25 C T 150 C; R =20k -25 V DGR j GS V gate-source voltage - 20 V GS I drain current T =25 C; V = 10 V; see Figure 2 and 3 - 100 A D mb GS T = 100 C; V = 10 V; see Figure 2 - 76.7 A mb GS I peak drain current T =25 C; pulsed; t 10 s; see Figure 3 - 300 A DM mb p P total power dissipation T =25 C; see Figure 1 - 62.5 W tot mb T storage temperature - 55 +150 C stg T junction temperature - 55 +150 C j Source-drain diode I source current T =25 C - 52 A S mb I peak source current T =25 C; pulsed; t 10 s - 208 A SM mb p Avalanche ruggedness E non-repetitive drain-source unclamped inductive load; I =80A; - 320 mJ DS(AL)S D avalanche energy t = 0.22 ms; V 25 V; R =50 ; p DS GS V = 10 V; starting at T =25 C GS j PH2525L_2 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 02 5 December 2006 2 of 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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