X-On Electronics has gained recognition as a prominent supplier of PHD20N06T,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHD20N06T,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHD20N06T,118 Nexperia

PHD20N06T,118 electronic component of Nexperia

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Part No.	PHD20N06T,118
Manufacturer:	Nexperia
Category:	MOSFETs
Description:	MOSFET TAPE13 MOSFET N-channel MOSFET with low on-resistance of 118 mO.
Datasheet:	PHD20N06T,118 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PHD20N06T,118 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 10000 Multiples : 2500	10000 : USD 0.2865 100000 : USD 0.2744 1000000 : USD 0.2702 5000000 : USD 0.2668 10000000 : USD 0.2667	N/A Obsolete

0 MOQ : 10000 Multiples : 10000	10000 : USD 0.3218 25000 : USD 0.3096 50000 : USD 0.3046 100000 : USD 0.2973	N/A Obsolete

We are delighted to provide the PHD20N06T,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHD20N06T,118 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

PHD20N06T 118 is a N-channel logic level field-effect transistor (FET) made with a trench HEXFET technology by Nexperia. This device has an operating drain-source voltage of 20 volts and a continuous drain current of 6 amperes. It has a low on-state resistance and a maximum power dissipation of 15 watts. The PHD20N06T 118 is RoHS and Halogen-free compliant and is suitable for automotive, industrial and consumer applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFETs MOSFETs
RoHS - XON y y
Id - Continuous Drain Current 18 A 18 A
Vds - Drain-Source Breakdown Voltage 55 V 55 V
Rds On - Drain-Source Resistance 154 mOhms 154 mOhms
Transistor Polarity n - channel n - channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 51 W 51 W
Mounting Style smd/smt smd/smt
Package / Case SOT - 428 SOT - 428
Packaging Reel Reel
Technology si si
Number of Channels 1 channel 1 channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 11 nC 11 nC
Channel Mode enhancement enhancement
Configuration single single
Brand Nexperia Nexperia
Continuous Drain Current 18 A 18 A
Drain-Source Breakdown Voltage 55 V 55 V
Gate-Source Breakdown Voltage 20 V 20 V
Power Dissipation 51 W 51 W
Rds On 154 mohms 154 mohms
Fall Time 40 ns 40 ns
Gate Charge Qg 11 nC 11 nC
Rise Time 50 ns 50 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 70 ns 70 ns
Height 2.38 mm 2.38 mm
Length 6.73 mm 6.73 mm
Transistor Type 1 n - channel 1 n - channel
Width 6.22 mm 6.22 mm
Cnhts 8541210000 8541210000
Hts Code 8541290075 8541290075
Mxhts 85412999 85412999
Product Type mosfet mosfet
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000