X-On Electronics has gained recognition as a prominent supplier of PHD20N06T,118 MOSFET across the USA, India, Europe, Australia, and various other global locations. PHD20N06T,118 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PHD20N06T,118 Nexperia

PHD20N06T,118 electronic component of Nexperia
Images are for reference only
See Product Specifications
Part No.PHD20N06T,118
Manufacturer: Nexperia
Category: MOSFET
Description: MOSFET TAPE13 MOSFET
N-channel MOSFET with low on-resistance of 118 mO.
Datasheet: PHD20N06T,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 10000
Multiples : 2500
10000 : USD 0.2958
100000 : USD 0.2834
1000000 : USD 0.279
5000000 : USD 0.2756
10000000 : USD 0.2754
N/A

Obsolete
0
MOQ : 10000
Multiples : 10000
10000 : USD 0.3324
25000 : USD 0.3197
50000 : USD 0.3146
100000 : USD 0.307
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
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Transistor Type
Width
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Hts Code
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Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PHD20N06T,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHD20N06T,118 and other electronic components in the MOSFET category and beyond.

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PHD20N06T 118 is a N-channel logic level field-effect transistor (FET) made with a trench HEXFET technology by Nexperia. This device has an operating drain-source voltage of 20 volts and a continuous drain current of 6 amperes. It has a low on-state resistance and a maximum power dissipation of 15 watts. The PHD20N06T 118 is RoHS and Halogen-free compliant and is suitable for automotive, industrial and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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