PHD36N03LT,118 NXP

PHD36N03LT N-channel TrenchMOS logic level FET Rev. 03 29 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Simple gate drive required due to low Suitable for logic level gate drive gate charge sources 1.3 Applications DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j I drain current T =25C V =10V - - 43.4 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 57.6 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =36A -2.9 -nC GD GS D V =15V T =25C DS j see Figure 11 and 12 Static characteristics R drain-source V =10V I =25A T =25C - 1417m DSon GS D j on-state resistance see Figure 9 and 10PHD36N03LT NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 1 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHD36N03LT DPAK plastic single-ended surface-mounted package (DPAK) 3 leads (one SOT428 lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -30.7 A D GS mb V =10V T =25C see Figure 1 and 3 -43.4 A GS mb I peak drain current t 10 s pulsed T = 25 C see Figure 3 -173.6A DM p mb P total power dissipation T =25C see Figure 2 -57.6 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 43.4 A S mb I peak source current t 10 s pulsed T = 25 C - 173.6 A SM p mb PHD36N03LT 3 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 29 March 2010 2 of 13