PHD77NQ03T,118 NXP

PHD/PHU77NQ03T N-channel TrenchMOS FET Rev. 01 28 November 2006 Product data sheet 1. Product prole 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features n Fast switching n Low thermal resistance 1.3 Applications n DC-to-DC converters n Computer motherboard 1.4 Quick reference data n V 25 V n I 75 A DS D n R 9.5 m n Q = 3.2 nC (typ) DSon GD 2. Pinning information Table 1. Pinning Pin Description Simplied outline Symbol 1 gate (G) mb [1] 2 drain (D) mb 3 source (S) D mb mounting base; connected to drain (D) G 2 mbb076 S 1 3 1 2 3 SOT428 (DPAK) SOT533 (IPAK) [1] It is not possible to make a connection to pin 2 of the SOT428 package.PHD/PHU77NQ03T NXP Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2. Ordering information Type number Package Name Description Version PHD77NQ03T DPAK plastic single-ended surface-mounted package; 3 leads SOT428 (one lead cropped) PHU77NQ03T IPAK plastic single-ended package; 3 leads (in-line) SOT533 4. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 25 V DS j V drain-gate voltage (DC) 25 C T 175 C; R =20k -25 V DGR j GS V gate-source voltage - 20 V GS I drain current T =25 C; V = 10 V; see Figure 2 and 3 -75 A D mb GS T = 100 C; V = 10 V; see Figure 2 - 55.9 A mb GS I peak drain current T =25 C; pulsed; t 10 s; see Figure 3 - 240 A DM mb p P total power dissipation T =25 C; see Figure 1 - 107 W tot mb T storage temperature - 55 +175 C stg T junction temperature - 55 +175 C j Source-drain diode I source current T =25 C - 75 A S mb I peak source current T =25 C; pulsed; t 10 s - 240 A SM mb p Avalanche ruggedness E non-repetitive drain-source unclamped inductive load; I =32A; - 100 mJ DS(AL)S D avalanche energy t = 0.17 ms; V 25 V; R =50 ; p DS GS V = 10 V; starting at T =25 C GS j PHD_PHU77NQ03T_1 NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 28 November 2006 2 of 13