PHE13003C,126 NXP

PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC - - 1.5 A C P total power dissipation T 25 C Fig. 1 - - 2.1 W tot lead V collector-emitter peak V = 0 V - - 700 V CESM BE voltage Static characteristics h DC current gain I = 0.5 A V = 2 V T = 25 C 8 17 25 FE C CE lead I = 1 A V = 2 V T = 25 C 5 9 15 C CE leadWeEn Semiconductors PHE13003C NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector B 3 E emitter E sym123 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHE13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 PHE13003C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 13 October 2016 2 / 11