X-On Electronics has gained recognition as a prominent supplier of PHE13003C,126 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. PHE13003C,126 Bipolar Transistors - BJT are a product manufactured by NXP. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

PHE13003C,126 NXP

PHE13003C,126 electronic component of NXP

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See Product Specifications

Part No.	PHE13003C,126
Manufacturer:	NXP
Category:	Bipolar Transistors - BJT
Description:	Transistors Bipolar - BJT Single NPN 1.5A 2.1W
Datasheet:	PHE13003C,126 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.4013 ea
Line Total: USD 0.4

Availability - 9374
Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

PHE13003C,126 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

9374

Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ : 1
Multiples : 1

1 : USD 0.4013
10 : USD 0.2588
100 : USD 0.1272
1000 : USD 0.0935
2500 : USD 0.0836
10000 : USD 0.0759
30000 : USD 0.0737
50000 : USD 0.0715

Specifications

Manufacturer

NXP NXP

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Technology

Si Si

Mounting Style

Through Hole Through Hole

Package / Case

TO - 92 TO - 92

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

1.5 A 1.5 A

Collector- Emitter Voltage VCEO Max

400 V 400 V

Collector- Base Voltage VCBO

700 V 700 V

Emitter- Base Voltage VEBO

9 V 9 V

Collector-Emitter Saturation Voltage

1.5 V 1.5 V

Pd - Power Dissipation

2.1 W 2.1 W

Maximum Operating Temperature

+ 150 C + 150 C

Packaging

Ammo Pack Ammo Pack

Brand

Nxp Semiconductors Nxp Semiconductors

Continuous Collector Current

1.5 A 1.5 A

Dc Collector/Base Gain Hfe Min

8 8

Maximum Power Dissipation

2.1 W 2.1 W

Factory Pack Quantity :

2000 2000

Dc Current Gain Hfe Max

25 25

Cnhts

8541290000 8541290000

Hts Code

8541290075 8541290075

Mxhts

85412999 85412999

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541290000 8541290000

Notes:- Show Stocked Products With Similar Attributes.

PHE13003C,126 Alternative Parts

We are delighted to provide the PHE13003C,126 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHE13003C,126 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I collector current DC - - 1.5 A C P total power dissipation T 25 C Fig. 1 - - 2.1 W tot lead V collector-emitter peak V = 0 V - - 700 V CESM BE voltage Static characteristics h DC current gain I = 0.5 A V = 2 V T = 25 C 8 17 25 FE C CE lead I = 1 A V = 2 V T = 25 C 5 9 15 C CE leadWeEn Semiconductors PHE13003C NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base C 2 C collector B 3 E emitter E sym123 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHE13003C TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 PHE13003C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 13 October 2016 2 / 11

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
9374 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 0.4013 10 : USD 0.2588 100 : USD 0.1272 1000 : USD 0.0935 2500 : USD 0.0836 10000 : USD 0.0759 30000 : USD 0.0737 50000 : USD 0.0715

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