GA03JT12-247 Normally OFF Silicon Carbide V = 1200 V DS Junction Transistor R = 470 m DS(ON) I = 3 A D Tc=150C h = 54 FE Tc=25C Features Package 175 C Maximum Operating Temperature Gate Oxide Free SiC Switch D Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance S Positive Temperature Coefficient of R DS,ON D G Suitable for Connecting an Anti-parallel Diode TO-247AB Advantages Applications Compatible with Si MOSFET/IGBT Gate Drive ICs Down Hole Oil Drilling, Geothermal Instrumentation > 20 s Short-Circuit Withstand Capability Hybrid Electric Vehicles (HEV) Lowest-in-class Conduction Losses Solar Inverters High Circuit Efficiency Switched-Mode Power Supply (SMPS) Minimal Input Signal Distortion Power Factor Correction (PFC) High Amplifier Bandwidth Induction Heating Uninterruptible Power Supply (UPS) Motor Drives Absolute Maximum Ratings Parameter Symbol Conditions Value Unit Notes V = 0 V Drain Source Voltage V GS 1200 V Fig. 6 DS Continuous Drain Current I T = 150 C 3 A Fig. 19 D C Continuous Gate Current I 1 A GM o T = 175 C, I = 1 A, I = 3 VJ G D,max Turn-Off Safe Operating Area RBSOA A Fig. 16 Clamped Inductive Load V V DS DSmax o T = 175 C, I = 1 A, V = 800 V, VJ G DS Short Circuit Safe Operating Area SCSOA 20 s Non Repetitive Reverse Gate Source Voltage V 30 V SG Reverse Drain Source Voltage V 25 V SD Power Dissipation P T = 150 C 15 W Fig. 14 tot C Storage Temperature T -55 to 175 C stg Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. On State Characteristics 470 I = 3 A, T = 25 C D j Drain Source On Resistance R I = 3 A, T = 125 C 530 m Fig. 5 DS(ON) D j I = 3 A, T = 175 C D j 730 I = 500 mA, T = 25 C 3.3 G j Gate Forward Voltage V V Fig. 4 GS(FWD) I = 500 mA, T = 175 C G j 3.1 V = 5 V, I = 3 A, T = 25 C 54 DS D j DC Current Gain h Fig. 5 FE V = 5 V, I = 3 A, T = 175 C DS D j 32 Off State Characteristics V = 1200 V, V = 0 V, T = 25 C 0.1 10 R GS j V = 1200 V, V = 0 V, T = 125 C Drain Leakage Current I R GS j 0.2 50 A Fig. 6 DSS V = 1200 V, V = 0 V, T = 175 C R GS j 0.5 100 V = 20 V, T = 25 C Gate Leakage Current I SG j 20 nA SG Aug 2014 Latest version of this datasheet at: GA03JT12-247 Electrical Characteristics Value Parameter Symbol Conditions Unit Notes Min. Typical Max. Capacitance Characteristics Input Capacitance C V = 0 V, V = 800 V, f = 1 MHz 315 pF Fig. 7 iss GS D Reverse Transfer/Output Capacitance C /C V = 800 V, f = 1 MHz 15 pF Fig. 7 rss oss D V = 0 V, V = 1000 V, f = 1 MHz Output Capacitance Stored Energy E GS D 6.1 J Fig. 8 OSS 1 Switching Characteristics f = 1 MHz, V = 25 mV, T = 175 C Internal Gate Resistance, Zero Bias R AC j 18.0 G(INT-ZERO) Internal Gate Resistance, On R V > 2.5 V 0.9 G(INT-ON) GS Turn On Delay Time t 17 ns d(on) T = 25 C, V = 800 V, I = 3 A, j DS D Fall Time, V t 20 ns Fig. 9, 11 DS f R = 40 , C = 9 nF, G(EXT) G V = 25/-5 V, Load = 267 Turn Off Delay Time t G 29 ns d(off) Refer to Fig. 20 for I Waveform G Rise Time, V t 30 ns Fig. 10, 12 DS r Turn On Delay Time t 14 ns d(on) T = 175 C, V = 800 V, I = 3 A, j DS D 19 Fall Time, V t R = 40 , C = 9 nF, ns Fig. 9 DS f G(EXT) G V = 25/-5 V, Load = 267 Turn Off Delay Time t G 23 ns d(off) Refer to Fig. 20 for I Waveform G Rise Time, V t 33 ns Fig. 10 DS r Turn-On Energy Per Pulse E 84 J Fig. 9, 11 on T = 25 C, V = 800 V, I = 3 A, j DS D Turn-Off Energy Per Pulse E R = 40 , C = 9 nF, 9 J Fig. 10, 12 off G(EXT) G V = 25/-5 V, Load = 1.05 mH G Total Switching Energy E 93 J tot 79 Turn-On Energy Per Pulse E J Fig. 9 on T = 175 C, V = 800 V, I = 3 A, j DS D Turn-Off Energy Per Pulse E R = 40 , C = 9 nF, 10 J Fig. 10 off G(EXT) G V = 25/-5 V, Load = 1.05 mH G Total Switching Energy E 89 J tot 1 All times are relative to the Drain-Source Voltage V DS Thermal Characteristics Thermal resistance, junction - case R 1.64 C/W Fig. 17 thJC Figures Figure 1: Typical Output Characteristics at 25 C Figure 2: Typical Output Characteristics at 125 C Aug 2014 Latest version of this datasheet at: