PHKD3NQ10T,518 NXP

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 16 December 2010 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for use in compact designs on-state resistance due to low profile Suitable for high frequency applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Motor and relay drivers 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C - - 100 V DS j j I drain current T = 25 C; One MOSFET --3 A D sp conducting P total power dissipation T=25C --2 W tot sp Static characteristics R drain-source on-state V =10V; I =1.5 A; - 7090m DSon GS D resistance T =25C j Dynamic characteristics gate-drain charge V =10V; I =3A; -8 -nC Q GD GS D V =80V; T =25C DS j