PHP160NQ08T,127 NXP

PHP160NQ08T N-channel TrenchMOS standard level FET Rev. 02 10 March 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 75 V DS j j I drain current T =25C; V =10V; --75 A D mb GS see Figure 1; see Figure 3 P total power T = 25 C; see Figure 2 - - 300 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V; I =25A; -28 - nC GD GS D V =60V; T =25C; DS j see Figure 11 Static characteristics R drain-source V =10V; I =25A; -4.8 5.6 m DSon GS D on-state resistance T = 25 C; see Figure 9; j see Figure 10NXP Semiconductors PHP160NQ08T N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base; connected to drain mbb076 S 12 3 SOT78 (TO-220AB; SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP160NQ08T TO-220AB; plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78 SC-46 TO-220AB PHP160NQ08T_2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 10 March 2009 2 of 13