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PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: V = 0.7 V GS(th) Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS j I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS ambNexperia PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D2 1 S1 source TR1 D1 1 6 2 G1 gate TR1 7 3 D2 drain TR2 G1 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 5. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCXB900UE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 6. Marking Table 4. Marking codes Type number Marking code PMCXB900UE 10 00 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMCXB900UE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 20
