X-On Electronics has gained recognition as a prominent supplier of PMCXB900UEZ MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMCXB900UEZ MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMCXB900UEZ Nexperia

PMCXB900UEZ electronic component of Nexperia
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Part No.PMCXB900UEZ
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET 20 V, complementary NP-channel Trench
Datasheet: PMCXB900UEZ Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4279 ea
Line Total: USD 0.43 
Availability - 5436
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
145
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.2491
10 : USD 0.2164
30 : USD 0.2023
100 : USD 0.1848
500 : USD 0.1771
1000 : USD 0.1146

5436
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4279
10 : USD 0.275
100 : USD 0.143
1000 : USD 0.1188
5000 : USD 0.0968
10000 : USD 0.0935
25000 : USD 0.0924
50000 : USD 0.0913
100000 : USD 0.0891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PMCXB900UEZ from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMCXB900UEZ and other electronic components in the MOSFETs category and beyond.

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PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 30 June 2015 Product data sheet 1. General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Very low threshold voltage for portable applications: V = 0.7 V GS(th) Leadless ultra small and ultra thin SMD plastic package: 1.1 1.0 0.37 mm ElectroStatic Discharge (ESD) protection > 1 kV HBM 3. Applications Relay driver High-speed line driver Level shifter Power management in battery-driven portables 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1 (N-channel), Static characteristics R drain-source on-state V = 4.5 V I = 600 mA T = 25 C - 470 620 m DSon GS D j resistance TR2 (P-channel), Static characteristics R drain-source on-state V = -4.5 V I = -500 mA T = 25 C - 1.02 1.4 DSon GS D j resistance TR1 (N-channel) V drain-source voltage T = 25 C - - 20 V DS j I drain current V = 4.5 V T = 25 C 1 - - 600 mA D GS amb TR2 (P-channel) V drain-source voltage T = 25 C - - -20 V DS j I drain current V = -4.5 V T = 25 C 1 - - -500 mA D GS ambNexperia PMCXB900UE 20 V, complementary N/P-channel Trench MOSFET 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm . Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D2 1 S1 source TR1 D1 1 6 2 G1 gate TR1 7 3 D2 drain TR2 G1 G2 2 5 4 S2 source TR2 8 3 4 5 G2 gate TR2 S1 S2 6 D1 drain TR1 017aaa262 Transparent top view 7 D1 drain TR1 DFN1010B-6 (SOT1216) 8 D2 drain TR2 5. Ordering information Table 3. Ordering information Type number Package Name Description Version PMCXB900UE DFN1010B-6 DFN1010B-6: plastic thermal enhanced ultra thin small outline SOT1216 package no leads 6 terminals 6. Marking Table 4. Marking codes Type number Marking code PMCXB900UE 10 00 00 READING DIRECTION MARKING CODE MARK-FREE AREA (EXAMPLE) PIN 1 INDICATION MARK READING EXAMPLE: YEAR DATE CODE 11 01 10 aaa-007665 Fig. 1. DFN1010B-6 (SOT1216) binary marking code description PMCXB900UE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 30 June 2015 2 / 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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