X-On Electronics has gained recognition as a prominent supplier of PHP191NQ06LT,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHP191NQ06LT,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHP191NQ06LT,127 Nexperia

PHP191NQ06LT,127 electronic component of Nexperia
PHP191NQ06LT,127 Nexperia
PHP191NQ06LT,127 MOSFETs
PHP191NQ06LT,127  Semiconductors

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See Product Specifications
Part No. PHP191NQ06LT,127
Manufacturer: Nexperia
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 240A; 300W; TO220AB
Datasheet: PHP191NQ06LT,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.6125 ea
Line Total: USD 3.61 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 4.0788
10 : USD 3.5148
100 : USD 2.8801
500 : USD 2.4518
1000 : USD 2.0678
2000 : USD 1.9644
5000 : USD 1.8906

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 1
Multiples : 1
1 : USD 4.1175
10 : USD 3.3306
100 : USD 2.2997
500 : USD 2.0359
1000 : USD 2.0206

0
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 3.6125
10 : USD 2.7485
50 : USD 2.266
100 : USD 2.101
250 : USD 2.09
500 : USD 1.925
1000 : USD 1.672
2500 : USD 1.672

0
Ship by Wed. 05 Mar to Fri. 07 Mar
MOQ : 1
Multiples : 1
1 : USD 4.2437
3 : USD 3.8102
6 : USD 2.7722
15 : USD 2.6277

0
Ship by Fri. 07 Mar to Thu. 13 Mar
MOQ : 50
Multiples : 50
50 : USD 2.3206
8000 : USD 2.1262
10000 : USD 2.104
24000 : USD 2.0618

   
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We are delighted to provide the PHP191NQ06LT,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHP191NQ06LT,127 and other electronic components in the MOSFETs category and beyond.

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PHP191NQ06LT N-channel TrenchMOS logic level FET Rev. 02 14 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 300 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =25A - 37.6 - nC GD GS D V =44V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =25A -3.1 3.7 m DSon GS D on-state resistance T = 25 C see Figure 10 j and 9

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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