X-On Electronics has gained recognition as a prominent supplier of PHP18NQ11T,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PHP18NQ11T,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PHP18NQ11T,127 Nexperia

PHP18NQ11T,127 electronic component of Nexperia
PHP18NQ11T,127 Nexperia
PHP18NQ11T,127 MOSFETs
PHP18NQ11T,127  Semiconductors

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See Product Specifications
Part No. PHP18NQ11T,127
Manufacturer: Nexperia
Category: MOSFETs
Description: Trans MOSFET N-CH 110V 18A 3-Pin(3+Tab) TO-220AB Rail
Datasheet: PHP18NQ11T,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.8125 ea
Line Total: USD 1.81 
Availability - 17
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 1.8125
10 : USD 1.38
100 : USD 0.9636
250 : USD 0.9548
500 : USD 0.8063
1000 : USD 0.7271
2500 : USD 0.7271
5000 : USD 0.6985

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Height
Length
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the PHP18NQ11T,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PHP18NQ11T,127 and other electronic components in the MOSFETs category and beyond.

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PHP18NQ11T N-channel TrenchMOS standard level FET Rev. 02 10 March 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low Suitable for high frequency thermal resistance applications due to fast switching characteristics 1.3 Applications Class-D audio amplifiers Inverters DC-to-DC convertors Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 110 V DS j j I drain current T =25C V =10V --18 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 --79 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =18A -8 -nC GD GS D V =80V T =25C DS j see Figure 11 Static characteristics R drain-source V =10V I =9A - 8090m DSon GS D on-state resistance T =25C j see Figure 9 and 10PHP18NQ11T Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP18NQ11T TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 110 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -110 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -13 A D GS mb V =10V T =25C see Figure 1 and 3 -18 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -72 A DM p mb P total power dissipation T =25C see Figure 2 -79 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 18 A S mb I peak source current t 10 s pulsed T =25C - 72 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =11A V 25 V -70 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t =0.1 ms R =50 p GS energy PHP18NQ11T 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 10 March 2010 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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