PHP110NQ06LT,127 NXP

PHP110NQ06LT N-channel TrenchMOS logic level FET Rev. 02 4 March 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources 1.3 Applications DC-to-DC convertors Motors, lamps and solenoids General industrial applications Uninterruptible power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current T =25C V =10V --75 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 - - 200 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =5V I =25 A V =44V -17 - nC GD GS D DS T = 25 C see Figure 11 j Static characteristics R drain-source V =10V I =25A T =25C -6.2 7 m DSon GS D j on-state resistance see Figure 9 and 10PHP110NQ06LT NXP Semiconductors N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PHP110NQ06LT TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -55 V DGR j j GS V gate-source voltage -15 15 V GS I drain current V =10V T = 100 C see Figure 1 -75 A D GS mb V =10V T =25C see Figure 1 and 3 -75 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -240 A DM p mb P total power dissipation T =25C see Figure 2 -200 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 75 A S mb I peak source current t 10 s pulsed T =25C - 240 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =75A V 55 V -280 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t =0.1 ms R =50 p GS energy PHP110NQ06LT 2 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 4 March 2010 2 of 13