PHE13005,127 NXP

PHE13005 Silicon diffused power transistor Rev.01 - 30 March 2018 Product data sheet 1. General description High voltage, high speed NPN planar-passivated power switching transistor in a SOT78 plastic package intended for use in high frequency electronic lighting ballast applications 2. Features and benefits Fast switching High voltage capability of 700 V Low thermal resistance 3. Applications Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Values Unit Absolute maximum rating V peak collector-emitter V = 0 V 700 V CESM BE voltage I DC Fig. 1 Fig. 2 Fig. 4 4 A C collector current (DC) P total power dissipation T 25 C Fig. 3 75 W tot mb Symbol Parameter Conditions Min Typ Max Unit Static characteristics h DC current gain I = 1 A V = 5 V T = 25 C 12 20 40 FE C CE mb Fig. 11 I = 2 A V = 5 V T = 25 C 10 17 28 C CE mb Fig. 11WeEn Semiconductors PHE13005 Silicon diffused power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 B base 2 C collector 3 E emitter mb C mounting base connected to collector 12 3 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PHE13005 TO-220AB plastic single-ended package heatsink mounted SOT78 1 mounting hole 3-lead TO-220AB PHE13005 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 30 March 2018 2 / 13